First-Principles Calculation for the Polarity During ZnO Crystals Grown on the C-Terminated 6H–SiC($000\bar{1}$) Surface
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概要
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The dynamics of zinc and oxygen adatoms deposited as atomic zinc and atomic oxygen on the C-terminated 6H–SiC($000\bar{1}$) surface are investigated using first-principles calculations. The results reveal that the original L site is unstable for the zinc adatom on the C-terminated 6H–SiC($000\bar{1}$) surface. However, the results reveal that the original L site is stable for the oxygen adatom on the C-terminated 6H–SiC($000\bar{1}$) surface. The migration barrier energy of an oxygen adatom on the C-terminated 6H–SiC($000\bar{1}$) surface is higher than that of a zinc adatom. Thus, the optimized growth conditions for the growth of ZnO crystals on the C-terminated 6H–SiC($000\bar{1}$) are Zn-polarity ZnO crystals grown under the stoichiometric growth condition.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-06-15
著者
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Abe Tomoki
Department Of Electrical And Electronic Engineering Faculty Of Engineering Tottori University
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Ando Koshi
Department Of Electrical And Electronic Engineering Tottori University
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Ebisuzaki Toshikazu
Computational Astrophysics Laboratory Institute Of Physical And Chemical Research (riken)
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Ishii Akira
Department Of Angiology And Cardiology Kitasato University Graduate School Of Medical Sciences
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Ando Koshi
Department of Electrical and Electronic Engineering, Tottori University, Koyama, Tottori 680-8552, Japan
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Fujiwara Katsutoshi
Department of Applied Mathematics and Physics, Tottori University, Koyama, Tottori 680-8552, Japan
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Ebisuzaki Toshikazu
Computational Astrophysics Laboratory, RIKEN, 2-1 Hirosaki, Wako, Saitama 351-0198, Japan
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Abe Tomoki
Department of Electrical and Electronic Engineering, Tottori University, Koyama, Tottori 680-8552, Japan
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