Migration Process on Ga-Terminated GaAs(001) Surface during Molecular Beam Epitaxial Growth

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概要

• 論文の詳細を見る

• The hopping barrier energies of As adatoms on Smooth GaAs(001) surfaces have been investigated using the first-principle pseudopotential density functional approach. The hopping barrier energies were calculated for a few surface structures. We found that the migration of As adatom exhibits anisotropy as well as that of Ga adatom and the hopping barrier energy for As adatom is smaller than that for Ga adatom. These results agree with the results of recent Monte Carlo simulations.

• 理論物理学刊行会の論文
• 2000-04-28

著者

• AISAKA Tsuyoshi

  Department of General Education, Tottori University

• Aisaka Tsuyoshi

  Department Of General Education Tottori University

• Aisaka T

  Tottori Univ. Tottori Jpn

• Aisaka Tsuyoshi

  Department Of Applied Mathematics And Physics Tottori University

• ISHII Akira

  Department of Medical Zoology, Jichi Medical School

• Ishii A

  Department Of Applied Biochemistry Faculty Of Engineering Tokai University

• SEINO Kaori

  Department of Applied Mathematics and Physics, Tottori University

• AIKAWA Tsuyoshi

  Department of Applied Physics, Faculty of Engineering Nagoya University

• Seino K

  Department Of Applied Mathematics And Physics Tottori University

• Seino Kaori

  Department Of Applied Mathematics And Physics Tottori University

• Ishii Akira

  Department Of Angiology And Cardiology Kitasato University Graduate School Of Medical Sciences

• Ishii Akira

  Department of Legal Medicine and Bioethics, Nagoya University Graduate School of Medicine

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