Surface Morphology Development during Molecular Beam Epitaxy Growth on a GaAs(100) Vicinal Surface
スポンサーリンク
概要
- 論文の詳細を見る
Using a kinetic Monte Carlo simulation, the homoepitaxial growth on a GaAs(100) vicinal surface misoriented toward the [011] direction has been studied. The growth mode transition, the topmost coverage variation and the surface morphology development are examined by varying the As/Ga flux ratio as well as the temperature. The kinetics of As play an important role in determining the growth mode transition, the coverage variation and the surface morphology during growth, which are similar to the case of a vicinal surface misoriented toward the [011] direction. A continuous growth mode transition is observed and is related to the surface morphology.
- 社団法人応用物理学会の論文
- 2000-07-30
著者
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KAWAMURA Takaaki
Department of Mathematics and Physics, University of Yamanashi
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ISHII Akira
Department of Medical Zoology, Jichi Medical School
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Maruta Junko
Department Of Physics Yamanashi University
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Kawamura Takaaki
Department Of Applied Physics School Of Science And Engineering Waseda University
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Ishii Akira
Department Of Angiology And Cardiology Kitasato University Graduate School Of Medical Sciences
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