The Temperature Effect and Surface State Resonance in Medium Energy Elctron Diffraction by Crystals
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概要
- 論文の詳細を見る
- 社団法人日本物理学会の論文
- 1976-01-15
著者
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KAWAMURA Takaaki
Department of Mathematics and Physics, University of Yamanashi
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Miyake Shizuo
Faculty Of Science And Technology Science University Of Tokyo
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OHKAWA Yasuhiro
Department of Applied Physics, School of Science and Engineering,Waseda University
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Ohkawa Yasuhiro
Department Of Applied Physics School Of Science And Engineering Waseda University
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Kawamura Takaaki
Department Of Applied Physics School Of Science And Engineering Waseda University
関連論文
- X-ray Interference Fringe of Bragg-(Bragg)^m-Laue Case(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- X-ray Interference Fringe in Bragg-(Bragg)^m-Laue Case from Thin Finite Crystal
- The Temperature Effect and Surface State Resonance in Medium Energy Elctron Diffraction by Crystals
- Layer-by-Layer Oxidation of Si(001) Surfaces
- Effect of Strong Borrmann Absorption on X-Ray Fluorescence Yield Curves
- Determination of Anomalous Scattering Factor by Using Transmitted Rocking Curves near the Absorption Edge
- Experimental Study of Inelastic Process at the Crystal Surface in Angle Resolved Low-Energy Electron Energy Loss Spectroscopy
- 2P-148 SDSL-ESRを用いた心筋トロポニンの動的構造変化(筋肉(筋蛋白質・収縮),第46回日本生物物理学会年会)
- Nature of Angle-Resolved Electron Energy Loss Spectrum
- X-Rays Beam Condensation by Confinement in a Thin Crystal
- Comparison of RHEED Dynamical Calculation Methods
- Origin of RHEED Intensity Oscillation during Growth Studied by Using Wave Functions
- Surface Diffusion during Decay of 2-Dimensional Island on Si(100)
- Orgin of Enhanced Borrmann Effect in Asymmetric Laue Case
- Surface Morphology Development during Molecular Beam Epitaxy Growth on a GaAs(100) Vicinal Surface
- Origin of Reducing Domain Boundaries of Si(111)-7×7 during Homoepitaxial Growth
- The Origin of Circular Arc in RHEED:1D Ordered Surface
- RHEED Intensity from Vicinal Si(100) Surfaces
- X-ray Interference Fringes from Weakly Bent Crystal
- Origin of Reflection High Energy Electron Diffraction Intensity Oscillation during Homoepitaxial Growth on GaAs(001)
- Amplification of Reflected X-ray Beams by the Mirage Effect
- First-Principle Calculation of Migration Processes of As during Growth on GaAs(001)
- Two-Beam X-ray Interferometer Using Diffraction in Multiple Bragg--Laue Mode
- X-ray Interference Fringes in Transmitted Beam of Bragg Mode from Very Weakly Bent Crystal
- Determination of Constant Strain Gradients of Elastically Bent Crystal Using X-ray Mirage Fringes
- Rate of X-ray Beam Confinement in Absorbing Crystal
- X-Rays Beam Condensation by Confinement in a Thin Crystal
- Determination of Anomalous Scattering Factor by Using Transmitted Rocking Curves near the Absorption Edge