Origin of RHEED Intensity Oscillation during Growth Studied by Using Wave Functions
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概要
- 論文の詳細を見る
- Physical Society of Japanの論文
- 2009-07-15
著者
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KAWAMURA Takaaki
Department of Mathematics and Physics, University of Yamanashi
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Maksym Peter
Department Of Physics And Astronomy University Of Leicester
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Maksym Peter
Deparment Of Physics And Astronomy University Of Leucester
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Kawamura Takaaki
Department Of Mathematics And Physics University Of Yamanashi
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Kawamura Takaaki
Department Of Applied Physics School Of Science And Engineering Waseda University
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- Nature of Angle-Resolved Electron Energy Loss Spectrum
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- Comparison of RHEED Dynamical Calculation Methods
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- Surface Diffusion during Decay of 2-Dimensional Island on Si(100)
- Orgin of Enhanced Borrmann Effect in Asymmetric Laue Case
- Surface Morphology Development during Molecular Beam Epitaxy Growth on a GaAs(100) Vicinal Surface
- Origin of Reducing Domain Boundaries of Si(111)-7×7 during Homoepitaxial Growth
- The Origin of Circular Arc in RHEED:1D Ordered Surface
- RHEED Intensity from Vicinal Si(100) Surfaces
- X-ray Interference Fringes from Weakly Bent Crystal
- Origin of Reflection High Energy Electron Diffraction Intensity Oscillation during Homoepitaxial Growth on GaAs(001)
- Amplification of Reflected X-ray Beams by the Mirage Effect
- First-Principle Calculation of Migration Processes of As during Growth on GaAs(001)
- Two-Beam X-ray Interferometer Using Diffraction in Multiple Bragg--Laue Mode
- X-ray Interference Fringes in Transmitted Beam of Bragg Mode from Very Weakly Bent Crystal
- Determination of Constant Strain Gradients of Elastically Bent Crystal Using X-ray Mirage Fringes
- Rate of X-ray Beam Confinement in Absorbing Crystal
- X-Rays Beam Condensation by Confinement in a Thin Crystal
- Determination of Anomalous Scattering Factor by Using Transmitted Rocking Curves near the Absorption Edge