Origin of Reflection High Energy Electron Diffraction Intensity Oscillation during Homoepitaxial Growth on GaAs(001)
スポンサーリンク
概要
- 論文の詳細を見る
The origin of RHEED intensity oscillation during homoepitaxial growth on GaAs(001) is studied on the basis of wave functions calculated with multiple scattering theory. At the most commonly used diffraction condition of glancing angle around 1° and incident electron energy of 15 keV, the origin is not unique and depends on the orientation of the step edges relative to the incident beam azimuth. When the step edges are perpendicular to the incident beam azimuth, the atomic density is the primary origin and the step density is a subsidiary one. When the step edges are parallel to the incident beam azimuth, the step density is the primary origin and the atomic density is a subsidiary one.
- 2011-06-15
著者
-
Maksym Peter
Deparment Of Physics And Astronomy University Of Leucester
-
Kawamura Takaaki
Department Of Applied Physics School Of Science And Engineering Waseda University
-
Maksym Peter
Department of Physics and Astronomy, University of Leicester, University Road, Leicester, LE1 7RH, U.K.
-
Kawamura Takaaki
Department of Mathematics and Physics, University of Yamanashi, Kofu 400-8510, Japan
関連論文
- X-ray Interference Fringe of Bragg-(Bragg)^m-Laue Case(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- 強磁場中の量子ドット : 「電子分子」と魔法数
- X-ray Interference Fringe in Bragg-(Bragg)^m-Laue Case from Thin Finite Crystal
- The Temperature Effect and Surface State Resonance in Medium Energy Elctron Diffraction by Crystals
- Layer-by-Layer Oxidation of Si(001) Surfaces
- Effect of Strong Borrmann Absorption on X-Ray Fluorescence Yield Curves
- Determination of Anomalous Scattering Factor by Using Transmitted Rocking Curves near the Absorption Edge
- Nature of Angle-Resolved Electron Energy Loss Spectrum
- X-Rays Beam Condensation by Confinement in a Thin Crystal
- Comparison of RHEED Dynamical Calculation Methods
- Origin of RHEED Intensity Oscillation during Growth Studied by Using Wave Functions
- Surface Diffusion during Decay of 2-Dimensional Island on Si(100)
- Orgin of Enhanced Borrmann Effect in Asymmetric Laue Case
- Surface Morphology Development during Molecular Beam Epitaxy Growth on a GaAs(100) Vicinal Surface
- Origin of Reducing Domain Boundaries of Si(111)-7×7 during Homoepitaxial Growth
- The Origin of Circular Arc in RHEED:1D Ordered Surface
- RHEED Intensity from Vicinal Si(100) Surfaces
- X-ray Interference Fringes from Weakly Bent Crystal
- Origin of Reflection High Energy Electron Diffraction Intensity Oscillation during Homoepitaxial Growth on GaAs(001)
- Amplification of Reflected X-ray Beams by the Mirage Effect
- First-Principle Calculation of Migration Processes of As during Growth on GaAs(001)
- Two-Beam X-ray Interferometer Using Diffraction in Multiple Bragg--Laue Mode
- X-ray Interference Fringes in Transmitted Beam of Bragg Mode from Very Weakly Bent Crystal
- Determination of Constant Strain Gradients of Elastically Bent Crystal Using X-ray Mirage Fringes
- Rate of X-ray Beam Confinement in Absorbing Crystal
- X-Rays Beam Condensation by Confinement in a Thin Crystal
- Determination of Anomalous Scattering Factor by Using Transmitted Rocking Curves near the Absorption Edge