First-Principle Calculation of Migration Processes of As during Growth on GaAs(001)
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概要
- 論文の詳細を見る
The microscopic migration of an As adatom on a Ga-terminated GaAs(001) surface is investigated by performing first-principle calculations using density functional theory and a slab model of the surface, because the importance of As adatommigration has been reported. The obtained values of barrier energy are compared with those to hopping in the kinetic Monte Carlo simulation. The anisotropic migration of the As adatom is clarified, which agrees with the result of the kinetic Monte Carlo simulation as well as the properties obtained by the scanning tunneling microscopy observation. It is shown that an As adatom is more mobile than a Ga adatom, and the kinetics of both As and Ga atoms on the growing surface are important during molecular beam epitaxial growth.
- 社団法人応用物理学会の論文
- 2000-07-30
著者
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ISHII Akira
Department of Medical Zoology, Jichi Medical School
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Kawamura Takaaki
Department Of Applied Physics School Of Science And Engineering Waseda University
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Seino Kaori
Department Of Applied Mathematics And Physics Tottori University
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Ishii Akira
Department Of Angiology And Cardiology Kitasato University Graduate School Of Medical Sciences
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