First-Principles Calculation of the Epitaxial Growth of GaN(0001) : Structure and Machanical and Thermal Properties of Condensed Matter
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概要
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The epitaxial growth of GaN(0001) is studied microscopically using the first-principles calculation. Because of the unusual nitrogen kinetics on the truncated GaN(0001), we found that the most stable site for nitrogen adatoms is not the original wurtzite lattice site but the H3 site for the case in which there is one N adatom and also the case in which there is one N adatom and one Ga adatom on the (2 × 2)-Ga surface. In order to locate the N adatom at the original wurtzite site naturally, two Ga adatoms are needed for each N adatom on the (2 × 2)-Ga surface.
- 社団法人応用物理学会の論文
- 2002-07-15
著者
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AISAKA Tsuyoshi
Department of General Education, Tottori University
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Aisaka Tsuyoshi
Department Of Applied Mathematics And Physics Tottori University
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ISHII Akira
Department of Medical Zoology, Jichi Medical School
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Miyake Daisuke
Department Of Applied Mathematics And Physics Tottori University
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Ishii Akira
Department Of Angiology And Cardiology Kitasato University Graduate School Of Medical Sciences
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Ishii Akira
Department Of Applied Mathematics And Physics Tottori University:national Institute Of Advanced Indu
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