Polarity Control of ZnO on N-Terminated GaN($000\bar{1}$) Surfaces
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概要
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We investigated the dynamics of zinc and oxygen adatoms deposited as atomic zinc and atomic oxygen on an N-polarity GaN($000\bar{1}$) surface, and the stability of 1 ML ZnO on an N-polarity GaN($000\bar{1}$) interfacial structure by first-principles calculation. We found that the adatom dynamics on an N-terminated GaN($000\bar{1}$) surface shows Zn polarity. However, we found in our calculated results that the most stable structure for 1 ML ZnO on an N-polarity GaN($000\bar{1}$) interface has O polarity. We found that the key to change the polarity of ZnO crystals grown on the N-terminated GaN($000\bar{1}$) surface is Zn–O interaction. We suggested that the optimal initial growth conditions for the growth of a Zn-polarity ZnO crystal on the N-terminated GaN($000\bar{1}$) surface are suitable low temperature and stoichiometric growth conditions that weaken the effect of Zn–O interaction.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-11-15
著者
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Abe Tomoki
Department Of Electrical And Electronic Engineering Faculty Of Engineering Tottori University
-
Ando Koshi
Department Of Electrical And Electronic Engineering Tottori University
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Ebisuzaki Toshikazu
Computational Astrophysics Laboratory Institute Of Physical And Chemical Research (riken)
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Ishii Akira
Department Of Angiology And Cardiology Kitasato University Graduate School Of Medical Sciences
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Fujiwara Katsutoshi
Department of Applied Mathematics and Physics, Tottori University, Koyama, Tottori 680-8552, Japan
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Ebisuzaki Toshikazu
Computational Astrophysics Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
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