High Gain and High Sensitive Blue-Ultraviolet Avalanche Photodiodes (APDs) of ZnSSe n+-i-p Structure Molecular Beam Epitaxy (MBE) Grown on p-type GaAs Substrates

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概要

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• High gain and high sensitive blue-ultraviolet avalanche photodiodes (APDs) are developed using high quality ZnSSe n+-i-p hetero-structure grown on p-type GaAs substrates by molecular beam epitaxy (MBE). The short wavelength APDs have been realized by a new technique of interface superlattice buffers between p-GaAs and p-ZnSe hetero-interfaces, by which we have overcome large interface energy barriers ($>1$ eV: for hole-conduction) and unstable dark leakage currents. Utilizing a benefit of the n+-i-p structure on p-GaAs, the short wavelength APDs have been designed with an thin transparent n+ window layer ($< 300$ Å), demonstrating large APD gains ($G>90$) and high sensitivities of 5–3 A/W in blue-ultraviolet optical region under very low reverse bias condition of 33 V.

• Japan Society of Applied Physicsの論文
• 2005-04-10

著者

• Abe Tomoki

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Tottori University

• Ando Koshi

  Department Of Electrical And Electronic Engineering Tottori University

• Kasada Hirofumi

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Tottori University

• Ando Koshi

  Department of Electrical and Electronic Engineering, Tottori University, 4-101 Minami, Koyama, Tottori 680-8552, Japan

• Abe Tomoki

  Department of Electrical and Electronic Engineering, Tottori University, 4-101 Minami, Koyama, Tottori 680-8552, Japan

• Ikumi Katsushi

  Department of Electrical and Electronic Engineering, Tottori University, 4-101 Minami, Koyama, Tottori 680-8552, Japan

• Maeta Hiroyasu

  Department of Electrical and Electronic Engineering, Tottori University, 4-101 Minami, Koyama, Tottori 680-8552, Japan

• Naruse Junji

  Department of Electrical and Electronic Engineering, Tottori University, 4-101 Minami, Koyama, Tottori 680-8552, Japan

• Miki Kouhei

  Department of Electrical and Electronic Engineering, Tottori University, 4-101 Minami, Koyama, Tottori 680-8552, Japan

• Ehara Akihiro

  Department of Electrical and Electronic Engineering, Tottori University, 4-101 Minami, Koyama, Tottori 680-8552, Japan

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