First-Principles Calculation of the Dyanamics of Nitrogen on the SiC(0001) Surface during the Epitaxial Growth of GaN(0001)
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概要
- 論文の詳細を見る
The dyanamics of nitrogen adatoms supplied as atomic nitrogen on the SiC(0001) surface is investigated using the first-priniciples calculation. The result reveals that the dynamics of the nitrogen adatoms on the SiC(0001) surface is very similar to that on the GaN(0001) surface. Thus, the optimized growth condition for the growth of GaN on SiC(0001) is the same as that for the homoepitaxial growth of GaN(0001).
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-07-15
著者
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AISAKA Tsuyoshi
Department of General Education, Tottori University
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Aisaka Tsuyoshi
Department Of Applied Mathematics And Physics Tottori University
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ISHII Akira
Department of Medical Zoology, Jichi Medical School
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Koyama Seishi
Department of Applied Mathematics and Physics, Tottori University, Koyama, Tottori 680-8552, Japan
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Koyama Seishi
Department Of Applied Mathematics And Physics Tottori University
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Ishii Akira
Department Of Angiology And Cardiology Kitasato University Graduate School Of Medical Sciences
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Ishii Akira
Department Of Applied Mathematics And Physics Tottori University
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