Deep Level Transient Spectroscopy Analysis of 10MeV Proton and 1MeV Electron Irradiation-Induced Defects in p-InGaP and InGaP-based Solar Cells
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-03-15
著者
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Yamaguchi M
Department Of Physics Yokohama National University
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ANDO Koshi
Department of Electrical and Electronic Engineering, Faculty of Engineering, Tottori University
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YAMAGUCHI Masafumi
Toyota Technological Institute
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KHAN Aurangzeb
Toyota Technological Institute
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Yamaguchi Masafumi
Ntt Ibaraki Electrical Communication Laboratories Nippon Telegraph And Telephone Corporation
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Ando Koshi
Department Of Electrical And Electronic Engineering Tottori University
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Khan Aurangzeb
Toyota Technological Institute:(present)department Of Electrical Engineering The Ohio State Universi
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TAKAMOTO Tatsuya
SHARP Corporation
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TAKAMOTO Tatsuya
Central Research Laboratory, Japan Energy Corporation
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Khan A
Department Of Electrical And Electronic Engineering Tottori University
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DHARMASO Nothaj
Toyota Technological Institute
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BOURGOIN Jacques
Laboratoire des Milieux Desordonnes et Heterogenes, Universite Pierre et Marie Curie
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Takamoto Tatsuya
Central Research Laboratory Japan Energy Corporation
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Bourgoin Jacques
Laboratoire Des Milieux Desordonnes Et Heterogenes Universite Pierre Et Marie Curie
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