Light-Induced Annealing of Dangling Bonds in a-Si:H
スポンサーリンク
概要
- 論文の詳細を見る
We have investigated the kinetics of light-induced defect (dangling bond) creation and annealing processes in a-Si:H containing a large amount of hydrogen at 300 K and 77 K using the ESR technique. We have obtained direct evidence for the light-induced annealing of dangling bonds at 300 K. A model, in which nonradiative recombination of electrons and holes at hydrogen-related dangling bonds is taken into account, is presented to interpret the experimental results.
- 社団法人応用物理学会の論文
- 1997-03-15
著者
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Yamaguchi M
Department Of Physics Yokohama National University
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Takeda Kosei
Esr Laboratory Electrochemical And Cancer Institute
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Yamaguchi Masaaki
Institute for Solid State Physics, University of Tokyo
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Morigaki K
Institute For Solid State Physics University Of Tokyo
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HIKITA Harumi
Laboratory of Physics, Meikai University
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KIMURA Yutaka
Tokai University
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YOKOMICHI Haruo
Department of Electronics and Informatics, Toyama Prefectural University
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MORIGAKI Kazuo
Department of Electrical Engineering, Hiroshima Institute of Technology
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Hikita H
Laboratory Of Physics Meikaiuniversity
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Yokomichi H
Toyama Prefectural Univ.
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Yokomichi Haruo
Department Of Electronics And Informatics Toyama Prefectural University
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Yamaguchi Masaaki
Institute For Solid State Physics University Of Tokyo
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Morigaki Kazuo
Department Of Electrical And Digital-system Engineering Hiroshima Insititute Of Technology
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HIKITA Harumi
Department of Physics, Josai Dental University
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MORIGAKI Kazuo
Institute of Solid State Physics,University of Tokyo
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