Two-Dimensional Contact-Type Image Sensor Using Amorphous Silicon Photo-Transistor
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概要
- 論文の詳細を見る
We propose a novel two-dimensional contact-type image sensor using amorphous silicon photo-transistors (APTs) in order to form a compact image scanner. Each pixel of the sensor consists of an APT, a storage capacitor, and an amorphous silicon thin-film transistor (a-Si TFT). We have made a prototype 140×240-pixel sensor with a pixel size of 160 μm square. It is confirmed that the prototype APT sensor can detect an image under room light. Exposure for gray scale images is in the range of 10^<-1> to 7 lx・s. This TFT-switched, two-dimensional contact-type image sensor is promising for large-area applications because the process for APTs is fully compatible with that for conventional a-Si TFTs.
- 社団法人応用物理学会の論文
- 1993-01-30
著者
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Yamaguchi M
Department Of Physics Yokohama National University
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Kaneko Yoshiyuki
Central Research Laboratory Hitachi Lid.
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Yamaguchi Masafumi
Ntt Ibaraki Electrical Communication Laboratories Nippon Telegraph And Telephone Corporation
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Yamaguchi Masafumi
Ntt Electrical Communications Laboratories
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TSUTSUI Kazuo
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Tsutsui K
Sony Corp. Tokyo Jpn
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Kaneko Y
Hewlett-packard Laboratories
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Yamaguchi M
Nagoya Univ. Nagoya Jpn
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TSUTSUI Ken
Central Research Laboratory, Hitachi, Lid.
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YAMAGUCHI Muneaki
Central Research Laboratory, Hitachi, Ltd.,
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Tsutsui Ken
Central Research Laboratory Hitachi Lid.
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