Threshold Voltage Shift of Amorphous Silicon Thin-Film Transistors During Pulse Operation

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概要

• 論文の詳細を見る

• The threshold voltage shift of amorphous silicon thin film transistors (TFT's) under pulse operation is discussed. The stress time, stress voltage, duty ratio and frequency dependence of the shift have been measured. A positive voltage stress causes a constant shift, when the frequency is in the range from DC to over 100 kHz, On the other hand, the shift under a negative pulse stress depends on its repetition frequency and its pulse width and can be described by an equivalent circuit model. Based on these data, a more reliable estimate of the long-term reliability of an amorphous silicon TFT panel has been realized.

• 社団法人応用物理学会の論文
• 1991-12-30

著者

• Kaneko Yoshiyuki

  Central Research Laboratory Hitachi Lid.

• ORITSUKI Ryoji

  Mobara Works, Hitachi, Lid.

• HORII Toshikazu

  Mobara Works, Hitachi, Lid.

• SASANO Akira

  Mobara Works, Hitachi, Lid.

• TSUTSUI Ken

  Central Research Laboratory, Hitachi, Lid.

• KOIZUMI Toshiko

  Musashino Works, Hitachi Device, Ltd.

• TSUKADA Toshihisa

  Central Research Laboratory, Hitachi, Lid.

• Tsutsui Ken

  Central Research Laboratory Hitachi Lid.

• Tsukada Toshihisa

  Central Research Laboratory Hitachi Lid.

• Koizumi Toshiko

  Musashino Works Hitachi Device Ltd.

• Sasano Akira

  Mobara Works Hitachi Lid.

• Horii Toshikazu

  Mobara Works Hitachi Lid.

• Oritsuki Ryoji

  Mobara Works Hitachi Lid.

関連論文

• Threshold Voltage Shift of Amorphous Silicon Thin-Film Transistors During Pulse Operation
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• Formulation of Power Loss Equation for an Emitter with Dot Contacts and Proposal of an Improved Emitter Structure in Silicon Solar Cells

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