Analysis of Effective Channel Length in Amorphous Silicon Thin-Film Transistors

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概要

• 論文の詳細を見る

• This paper analyzes the effective channel length in amorphous silicon thin-film transistors (a-Si TFTs) by examining the parasitic channel length, ?L, which causes the apparent dependence of the field-effect mobility of TFTs on the nominal channel length. The parasitic channel length is found to depend on the a-Si thickness, L_a, at the source path and the drain path of TFTs if there is no etching stopper insulator on the a-Si layer. An analytical formula for the parasitic channel length is derived by assuming that the space-charge-limited current is the dominant conduction mechanism through these paths. The validity of the analysis is confirmed by applying the formula to the experimental results on the ?L-L_a relationship for a range of L_a between 0.18 and 0.98 μm.

• 社団法人応用物理学会の論文
• 1992-11-15

著者

• Kaneko Yoshiyuki

  Central Research Laboratory Hitachi Lid.

• Kaneko Yoshiyuki

  Central Research Laboratory Hitachi Ltd.

• Toyabe Tooru

  Department Of Information And Computer Science Toyo University:bio-nano Electronics Research Center

• TSUKADA Toshihisa

  Central Research Laboratory, Hitachi, Lid.

• TOYABE Tooru

  Central Research Laboratory, Hitachi, Ltd.

• Tsukada Toshihisa

  Central Research Laboratory Hitachi Ltd.

• Tsukada Toshihisa

  Central Research Laboratory Hitachi Lid.

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• Two-Dimensional Contact-Type Image Sensor Using Amorphous Silicon Photo-Transistor
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