Advantages of the Asymmetric Tunnel Barrier for High-Density Integration of Single Electron Devices (<Special Issue> Quantum Dot Structures)

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1997-06-30

著者

• Sugano Takeshi

  Department Of Electrical Engineering Faculty Of Engineering Osaka University

• Matsumoto Y

  Materials And Structures Laboratory Tokyo Institute Of Technology

• SUGANO Takuo

  Department of Electrical and Electronic Engineering, Toyo University

• SUGANO Takuo

  Nanoelectronic Materials Laboratory, RIKEN

• MATSUMOTO Yoshinari

  Department of Dermatology, Aichi Medical University

• Matsumoto Yoshinari

  Depariment Of Dermatology

• Matsumoto Yoshinari

  Department Of Electrical And Electronic Engineering Toyo University

• HANAJIRI Taturo

  Department of Electrical and Electronic Engineering, Toyo University

• TOYABE Tohru

  Department of Information and Computer Science, Toyo University

• Toyabe Tooru

  Department Of Information And Computer Science Toyo University:bio-nano Electronics Research Center

• Matsumoto Y

  Nara Inst. Sci. And Technol. Ikoma‐shi Jpn

• Sugano T

  Nanoelectronic Materials Laboratory Frontier Research Program Riken

• Hanajiri T

  Toyo Univ. Saitama Jpn

• Matsumoto Yuji

  Materials And Structures Laboratory Tokyo Institute Of Technology

関連論文

• Fabrication of Multilayer Structures and Ramp-Edge Josephson Junctions with (Hg,Re)Ba_2CaCu_2O_y Films
• Fabrication of Multilayer Structures and Ramp-Edge Josephson Junctions with (Hg,Re)Ba2CaCu2Oy Films
• (Hg, Re)Ba_2CaCu_2O_y [100]-Tilt Grain Boundary Josephson Junctions with High Characteristic Voltages
• Noise Properties of (Hg_Re_)Ba_2CaCu_2O_y Dc Superconducting Quantum Interference Device on (LaAlO_3)_-(SrAl_Ta_O_3)_ Substrates : Superconductors
• Interferometry of KrF-Laser-Produced Plasma by Shortened Stokes Pulse
• Ferromagnetism in Co-Doped TiO_2 Rutile Thin Films Grown by Laser Molecular Beam Epitaxy
• Control of the Electrical Properties of AlN/thin-a-Si/GaAs MIS Diodes by GaAs Surface Pretreatments
• Effects of InP Surface Treatment on the Electrical Properties and Structures of AlN/n-InP Interface
• Interfacial Superstructure of AIN/n-GaAs(001) System Fabricated by Metalorganic Chemical Vapor Deposition : Surfaces, Interfaces and Films
• Magnetic Field in Direct- and Indirect-Gap Semiconductor Quantum Dots
• Fourier-Jacobi Expansion of Eisenstein Series on Unitary Groups of Degree Three
• Optical, Electrical and Structural Investigations of the Transition from Amorphous to Microcrystalline Silicon
• Observation of Direct Transitions in Silicon Nanocrystallites
• Violet and Blue Light Emissions from Nanocrystalline Silicon Thin Films
• Effect of a Magnetic Field on the Excitonic Luminescence Decay Time in a GaAs-Al_xGa_As Quantum Well
• Beating of the Shubnikov-de Haas Oscillations in GaAs/AlGaAs Quantum-Dot Arrays
• Modeling of Electron Transport in Corrugated Quantum Wires
• Ballistic Weak Localization and Wave Function Scarring in Quantum Wires
• Epitaxial Stress Effect on Crystallographic Properties of Bi_4Ti_3O_ Heterostructures and Their Leakage Current Behaviors
• Memory Retention and Switching Speed of Ferroelectric Field Effect in (Pb, La)(Ti, Zr)O_3/La_2CuO_4:Sr Heterostructure
• A Preliminary Experimental Study on Dielectric Properties of Metal/(Pb, La)(Ti, Zr)O_3/Semiconductive Perovskite Heterostructures
• All-Perovskite Ferroelectric/Semiconductor Field Effect Transistor
• Crystallographic and Electrical Properties of Epitaxial BaTiO_3 Film Grown on Conductive and Insulating Perovskite Oxides ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
• Is There a Magnetic-Field-Induced Breakdown in the Universality of Conductance Fluctuations?
• Probing the Discrete Level Spectrum of Open Quantum Dots
• Phase Breaking of Coherent Electron Waves in Dot Array Systems ( Quantum Dot Structures)
• The Role of Electron Phase Coherence in Quantum Transport through Open Ballistic Cavities ( Quantum Dot Structures)
• Quantum Transport in Single and Multiple Quantum Dots ( Quantum Dot Structures)
• Carrier Transport in Nanodevices
• Trajectory Transition Due to Gate Depletion in Corrugation Gated Quantum Wires
• Photochemical Approach to Analysis of Ferroelectric Transition in Ba_xSr_TiO_3 Epitaxial Films
• Photochemical Identification of a Possible Adsorbed Pentacene Molecule on the SrTiO_3(001)
• Direct Observation of Interlayer Josephson Vortices in Heavily Pb-Doped Bi_2Sr_2CaCu_2O_y by Scanning Superconducting Quantum Interference Device Microscopy
• Pulsed Laser Epitaxy and Magnetic Properties of Single Phase Y-Type Magnetoplumbite Thin Films
• Fabrication and Anisotropic Transport Properties of (Hg, Re) Ba_2CaCu_2O_y Epitaxial Thin Films on Vicinal Substrates with Buffer Layers
• Chemical trend of Fermi-level shift in transition metal-doped TiO2 films
• Hetero-Epitaxial Growth of ZnO Film by Temperature-Modulated Metalorganic Chemical Vapor Deposition
• Molecular layer-by-layer growth of C-60 thin films by continuous-wave infrared laser deposition
• X-Ray Magnetic Circular Dichroism and Structural Model for Co-Doped TiO_2 (Anatase) Thin Film (Condensed Matter : Structure, Mechanical and Thermal Properties)
• Temperature Dependence of Absorption Spectra in Anatase TiO_2 Epilayers
• Temperature Dependence of Absorption Spectra in Anatase TiO_2 Epilayers
• Combinatorial Laser Molecular Beam Epitaxy (MBE) Growth of Mg-Zn-O Alloy for Band Gap Engineering
• Epitaxial Growth of Poly(dimethylsilane) Evaporated Films on Poly(tetrafluoroethylene) Layer
• Room Temperature Ultraviolet Electroluminescence from Evaporated Poly(dimethylsilane) Film
• Digital Etching Using KrF Excimer Laser: Approach to Atomic-Order-Controlled Etching by Photo Induced Reaction
• Direct Observation of Self-Limiting Gallium Deposition on GaAs during Laser-Atomic Layer Epitaxial Processing
• Characterization of La-doped YBCO superconducting films deposited by DC magnetron sputtering at various off-axis geometries
• Properties of (Hg_Re_)Ba_2CaCu_2Oy Grain Boundary Junctions on SrTiO_3 and (LaAlO_3)_-(SrAl_Ta_O_3)_ Substrates with Different Misorientation Angles
• Advantages of the Asymmetric Tunnel Barrier for High-Density Integration of Single Electron Devices ( Quantum Dot Structures)
• Single Electron Device with Asymmetric Tunnel Barriers
• A Perspective on Next-Generation Silicon Devices
• Alignment Control of a Liquid Crystal on a Photosensitive Polyvinylalcohol Film
• Ionic Conduction and Ultrasonic Velocity in Na_Zr_Mn_x(PO_4)_3
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• Simple Ultraviolet Short-Pulse Intensity Diagnostic Method Using Atmosphere
• High-Repetition-Rate Electron-Beam-Pumped KrF Laser Technology for Inertial-Fusion-Energy Drivers
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• Low-Temperature ^Sn-Mossbauer Study of Superconducting Bi_4Sr_Ca_Cu_4Sn_O_ Ceramic (2212 Phase)
• ^Sn-Mossbauer Study on the Normal Lattice Vibration of Superconducting Bi(Pb)_2Sr_2Ca_2Cu_3Sn_O_
• Precipitation of Mayenite in 60CaO・35Al_2O_3・5Fe_2O_3 Glass Annealed at Several Temperatures Below and Above the Glass Transition Temperature
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• Electron Mobility in In_Ga_xAs Epitaxial Layer
• Improvement of the Electrical Properties of the AlN/GaAs MIS System and Their Thermal Stability by GaAs Surface Stoichiometry Control : Surfaces, Interfaces and Films
• Calculations of Energy Levels of Oxygen and Silicon Vacancies at the Si-SiO_2 Interface
• Fabrication of Josephson Weak Links Using Electron Beam Lithography and Ion-Etching, and Proposal of a New Single Flux Quantum Logic : C-2: JOSEPHSON DEVICES
• ^Sn-Mossbauer Spectroscopic Study of High-T_c Superconducting YBa_2(Cu_Sn_)_3O_ and the Gamma-Ray Irradiation Effect
• Interface Analysis of Al_2O_3/InP Structure Prepared by Molecular Beam Deposition
• ESR Study on the SeO^_4 Radical in RbH_2PO_4
• Bistable Fluctuation of SeO^_4 Centers Doped in Partially Deuterated KH_2PO_4 Observed by ESR
• Fabrication of Step-Edge Junctions on the Concave or Convex Side of YBa_2Cu_3O_ Film
• Magnetic and Electrical Properties of Vacuum-Deposited CdCr_2Se_4 Thin Film
• Studies on Chemically Etched Silicon, Gallium Arsenide, and Gallium Phosphide Surfaces by Auger Electron Spectroscopy
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• Phenomenological Dynamical Theory of KH_2PO_4 in Paraelectric Phase
• Hall Mobility of Electrons in Silicon Surface Inversion Layers
• Galvanomagnetic Effects in Silicon Surface Inversion Layers
• Mobility of Magnetic Domain Wall of Strip Domain in Garnet Crystal : Computer Simulation and Measurement : B-2: BUBBLE DEVICES (II)
• Optical Properties of Vacuum-Deposited CdCr_2Se_4 Thin Film
• Effects of PAs_xN_y Deposition Conditions and the Cd Concentration in the Substrates on the Characteristics of In_Ga_As Metal-Insulator-Semiconductor Field Effect Transistors : Special Section : Solid State Devices and Materials 2 : III-V Comp
• Deep Level Transient Spectroscopy of Bulk Traps and Interface States in Si MOS Diodes
• Epitaxial Growth of SiC Film on Silicon Substrate and Its Crystal Structure
• Fabrication of Bi_2Sr_2CaCu_2O_x High T_c Superconducting Film with H_2O Assisted Metalorganic Chemical Vapor Deposition
• Vapor Deposition of Silicon Nitride Film on Silicon and Properties of MNS Diodes
• Physical and Technological Limits in Size of Semiconductor Devices : E-2: PHYSICAL AND TECHNOLOGICAL LIMITS OF HIGH-DENSITY INTERGRATION
• Forward Characteristics of Si Schottky Diodes
• Plasma-Oxidized Tunnel Barrier of Nb/Nb Josephson Junctions with Copper Interlayer
• Scattering of Electrons by Potential Clusters in Ternary Alloy Semiconductor
• Proposal for Criterion on Deformation of III-V Ternary Alloy Crystal Lattice
• Chemical Deposition of Mo on Si
• Magnetic Modulation of Critical Current in MB DC-SQUID
• Fabrication of Si-Mo-Si Three Layer Structure and Its Current Transfer Characteristics
• Raman Scattering Study of (NH_4)_3H(SeO_4)_2 Single Crystal in High Temperature Phases : Condensed Matter: Electronic Properties, etc.
• Anodization of Silicon in RF Induced Oxygen Plasma : A-2: MOS DEVICES/BASIC ASPECTS
• Hot Electron-Phonon Interaction in Metals
• Defect-Free Reactive Ion Etching of Silicon by SiF_4/Cl_2 Plasma
• Thermodynamical Calculation and Experimental Confirmation of the Density of Hole Traps in SiO_2 Films
• Beating of the Shubnikov-de Haas Oscillations in GaAs/AlGaAs Quantum-Dot Arrays
• Cascade Model for Reduction of Field-Effect Mobility of Electrons in Lightly Doped Channel of Submicron Gate Si Thin-Film Field-Effect Transistors
• Advantages of the Asymmetric Tunnel Barrier for High-Density Integration of Single Electron Devices

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