Advantages of the Asymmetric Tunnel Barrier for High-Density Integration of Single Electron Devices
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概要
- 論文の詳細を見る
The advantages of single electron devices with asymmetric tunnel barriers for high-density integration were demonstrated by computer simulation. Electron tunneling rates through the asymmetric potential profile of the tunnel barrier are dependent on the energy of the tunneling electron. This energy-dependent tunnel rate leads to two important advantages in single electron devices. First, an unintended tunneling caused by co-tunneling or thermal excitation in the Coulomb blockade region can be substantially suppressed, improving the reliability of the device performance. Secondly, the circuit design becomes simpler with unilateral electron tunneling. The advantages of asymmetric tunnel barriers are a breakthrough for the preventation of the difficulties associated with conventional single electron devices.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1997-06-30
著者
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SUGANO Takuo
Department of Electrical and Electronic Engineering, Toyo University
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Matsumoto Yoshinari
Depariment Of Dermatology
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HANAJIRI Taturo
Department of Electrical and Electronic Engineering, Toyo University
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TOYABE Tohru
Department of Information and Computer Science, Toyo University
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Sugano Takuo
Department of Electrical and Electronic Engineering, Toyo University, 2100, Kujirai, Kawagoe, Saitama 350, Japan
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Hanajiri Taturo
Department of Electrical and Electronic Engineering, Toyo University, 2100, Kujirai, Kawagoe, Saitama 350, Japan
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Toyabe Tohru
Department of Information and Computer Science, Toyo University, 2100, Kujirai, Kawagoe, Saitama 350, Japan
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