A Perspective on Next-Generation Silicon Devices
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-01-30
著者
-
Sugano Takeshi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
-
SUGANO Takuo
Department of Electrical and Electronic Engineering, Toyo University
-
SUGANO Takuo
Department of Electrical and Electronic Engineering, Toyo University : Frontier Research Program, Institute of Physical and Chemical Research
関連論文
- Fabrication of Multilayer Structures and Ramp-Edge Josephson Junctions with (Hg,Re)Ba_2CaCu_2O_y Films
- Fabrication of Multilayer Structures and Ramp-Edge Josephson Junctions with (Hg,Re)Ba2CaCu2Oy Films
- (Hg, Re)Ba_2CaCu_2O_y [100]-Tilt Grain Boundary Josephson Junctions with High Characteristic Voltages
- Noise Properties of (Hg_Re_)Ba_2CaCu_2O_y Dc Superconducting Quantum Interference Device on (LaAlO_3)_-(SrAl_Ta_O_3)_ Substrates : Superconductors
- Magnetic Field in Direct- and Indirect-Gap Semiconductor Quantum Dots
- Fourier-Jacobi Expansion of Eisenstein Series on Unitary Groups of Degree Three
- Optical, Electrical and Structural Investigations of the Transition from Amorphous to Microcrystalline Silicon
- Observation of Direct Transitions in Silicon Nanocrystallites
- Violet and Blue Light Emissions from Nanocrystalline Silicon Thin Films
- Effect of a Magnetic Field on the Excitonic Luminescence Decay Time in a GaAs-Al_xGa_As Quantum Well
- Beating of the Shubnikov-de Haas Oscillations in GaAs/AlGaAs Quantum-Dot Arrays
- Fabrication and Anisotropic Transport Properties of (Hg, Re) Ba_2CaCu_2O_y Epitaxial Thin Films on Vicinal Substrates with Buffer Layers
- Epitaxial Growth of Poly(dimethylsilane) Evaporated Films on Poly(tetrafluoroethylene) Layer
- Room Temperature Ultraviolet Electroluminescence from Evaporated Poly(dimethylsilane) Film
- Digital Etching Using KrF Excimer Laser: Approach to Atomic-Order-Controlled Etching by Photo Induced Reaction
- Direct Observation of Self-Limiting Gallium Deposition on GaAs during Laser-Atomic Layer Epitaxial Processing
- Characterization of La-doped YBCO superconducting films deposited by DC magnetron sputtering at various off-axis geometries
- Properties of (Hg_Re_)Ba_2CaCu_2Oy Grain Boundary Junctions on SrTiO_3 and (LaAlO_3)_-(SrAl_Ta_O_3)_ Substrates with Different Misorientation Angles
- Advantages of the Asymmetric Tunnel Barrier for High-Density Integration of Single Electron Devices ( Quantum Dot Structures)
- Single Electron Device with Asymmetric Tunnel Barriers
- A Perspective on Next-Generation Silicon Devices
- Alignment Control of a Liquid Crystal on a Photosensitive Polyvinylalcohol Film
- Electron Mobility in In_Ga_xAs Epitaxial Layer
- Calculations of Energy Levels of Oxygen and Silicon Vacancies at the Si-SiO_2 Interface
- Fabrication of Josephson Weak Links Using Electron Beam Lithography and Ion-Etching, and Proposal of a New Single Flux Quantum Logic : C-2: JOSEPHSON DEVICES
- Interface Analysis of Al_2O_3/InP Structure Prepared by Molecular Beam Deposition
- Fabrication of Step-Edge Junctions on the Concave or Convex Side of YBa_2Cu_3O_ Film
- Magnetic and Electrical Properties of Vacuum-Deposited CdCr_2Se_4 Thin Film
- Studies on Chemically Etched Silicon, Gallium Arsenide, and Gallium Phosphide Surfaces by Auger Electron Spectroscopy
- Ordered Structure and Ion Migration in Silicon Dioxide Films
- Hall Mobility of Electrons in Silicon Surface Inversion Layers
- Galvanomagnetic Effects in Silicon Surface Inversion Layers
- Mobility of Magnetic Domain Wall of Strip Domain in Garnet Crystal : Computer Simulation and Measurement : B-2: BUBBLE DEVICES (II)
- Optical Properties of Vacuum-Deposited CdCr_2Se_4 Thin Film
- Effects of PAs_xN_y Deposition Conditions and the Cd Concentration in the Substrates on the Characteristics of In_Ga_As Metal-Insulator-Semiconductor Field Effect Transistors : Special Section : Solid State Devices and Materials 2 : III-V Comp
- Deep Level Transient Spectroscopy of Bulk Traps and Interface States in Si MOS Diodes
- Epitaxial Growth of SiC Film on Silicon Substrate and Its Crystal Structure
- Fabrication of Bi_2Sr_2CaCu_2O_x High T_c Superconducting Film with H_2O Assisted Metalorganic Chemical Vapor Deposition
- Vapor Deposition of Silicon Nitride Film on Silicon and Properties of MNS Diodes
- Physical and Technological Limits in Size of Semiconductor Devices : E-2: PHYSICAL AND TECHNOLOGICAL LIMITS OF HIGH-DENSITY INTERGRATION
- Forward Characteristics of Si Schottky Diodes
- Plasma-Oxidized Tunnel Barrier of Nb/Nb Josephson Junctions with Copper Interlayer
- Scattering of Electrons by Potential Clusters in Ternary Alloy Semiconductor
- Proposal for Criterion on Deformation of III-V Ternary Alloy Crystal Lattice
- Chemical Deposition of Mo on Si
- Magnetic Modulation of Critical Current in MB DC-SQUID
- Fabrication of Si-Mo-Si Three Layer Structure and Its Current Transfer Characteristics
- Anodization of Silicon in RF Induced Oxygen Plasma : A-2: MOS DEVICES/BASIC ASPECTS
- Hot Electron-Phonon Interaction in Metals
- Defect-Free Reactive Ion Etching of Silicon by SiF_4/Cl_2 Plasma
- Thermodynamical Calculation and Experimental Confirmation of the Density of Hole Traps in SiO_2 Films
- Beating of the Shubnikov-de Haas Oscillations in GaAs/AlGaAs Quantum-Dot Arrays
- Cascade Model for Reduction of Field-Effect Mobility of Electrons in Lightly Doped Channel of Submicron Gate Si Thin-Film Field-Effect Transistors
- Advantages of the Asymmetric Tunnel Barrier for High-Density Integration of Single Electron Devices