Fabrication of Si-Mo-Si Three Layer Structure and Its Current Transfer Characteristics
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1969-09-05
著者
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SUGANO Takuo
Department of Electrical and Electronic Engineering, Toyo University
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Obunai Tetsuo
Department Of Electronics Engineering University Of Tokyo
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Obunai Tetsuo
Department Of Electrical And Electronic Engineering Faculty Of Engineering And Research Science Akit
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Sugano Takuo
Department Of Electronics Engineering University Of Tokyo
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Chou Hsun-kwei
Department Of Electronics Engineering University Of Tokyo
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Chou Hsun-kwei
Department Of Electronics Engineering Faculty Of Engineering University Of Tokyo
関連論文
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- A Perspective on Next-Generation Silicon Devices
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- Effect of Dielectric Slab on Millimeter Wave Propagation in Solid-State Plasma Waveguide
- Possibility of Submillimeter Slow Surface Wave Resonance in a Two-Layer Parallel-Plate Waveguide Containing n-Type or p-Type InSb Slab
- Seventy GHz Slow Surface Wave Propagation in a Waveguide Containing Transversely Magnetized p-Type and n-Type InSb Slabs
- Experimental Studies on 70 GHz Slow Surface Wave Propagation in Transversely Magnetized Partially Filled Ring-Form Solid-Plasma Waveguide
- Electron Mobility in In_Ga_xAs Epitaxial Layer
- Calculations of Energy Levels of Oxygen and Silicon Vacancies at the Si-SiO_2 Interface
- Fabrication of Josephson Weak Links Using Electron Beam Lithography and Ion-Etching, and Proposal of a New Single Flux Quantum Logic : C-2: JOSEPHSON DEVICES
- Observation of a Slow-Surface Wave in Millimeterwave Solid-State Plasma Waveguide
- Interface Analysis of Al_2O_3/InP Structure Prepared by Molecular Beam Deposition
- Nonreciprocal Propagation Characteristics of 2.5 THz Submillimeter Wave in Two-Layer Parallel-Plate Waveguide Containing n-InSb Slab at Room Temperature
- Propagation Modes in Millimeter-Wave Solid-State Plasma Waveguide
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