Plasma-Oxidized Tunnel Barrier of Nb/Nb Josephson Junctions with Copper Interlayer
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概要
- 論文の詳細を見る
Niobium/niobium Josephson tunnel junctions were fabricated using electron-beam evaporation of Nb films and rf-plasma oxidation. Niobium reacts easily with oxygen, resulting in a decrease in its transition temperature. In order to suppress this reaction between the tunnel barrier and the Nb counter-electrode, a thin layer of Cu was evaporated on the tunnel oxide before the Nb counter-electrode was deposited. The sub-gap current of Nb/Nb junctions with a Cu interlayer was found to be smaller than without the interlayer. Moreover, it was found that using a clean and stabilized plasma process in forming the tunnel barrier is useful in decreasing the sub-gap current of the Nb/Nb junctions.
- 社団法人応用物理学会の論文
- 1984-08-20
著者
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NAKAYAMA Akiyoshi
Department of Internal Medicine, Division of Rheumatology, National Defense Medical College
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SUGANO Takuo
Department of Electrical and Electronic Engineering, Toyo University
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Okabe Yoichi
Departments Of Electrical And Electronic Engineering University Of Tokyo
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Okabe Yoichi
Department Of Electrical And Electronics Engineering University Of Tokyo
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Sugano Takuo
Departments Of Electrical And Electronic Engineering University Of Tokyo
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Nakayama Akiyoshi
Department Of Internal Medicine Division Of Rheumatology National Defense Medical College
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Nakayama Akiyoshi
Departments Of Electrical And Electronic Engineering University Of Tokyo
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