Deep Level Transient Spectroscopy of Bulk Traps and Interface States in Si MOS Diodes

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概要

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• Deep-level transient spectroscopy (DLTS) of bulk traps and interface states in Si MOS diodes are theoretically studied and energy levels, capture cross-sections and spatial and energy density distributions of majority-carrier traps are measured. In P^+ -implanted nuannealed MOS diodes, four bulk traps are measured at E_c-0.18 eV, E_c-0.20 eV, E_c-0.31 eV and E_c-0.45 eV. Their spatial distributions are found to be the same among them within experimental error and thought to be corresponding to the distribution of implanted ions qualitatively. Bulk traps are distinguished from interface states experimentally. The capture cross-section of interface states in non-implanted MOS diodes are measured to be of the order of 10^16 cm^2 in the energy range of E_c-0.15 eV to E_c-0.30 eV. The interface state density measured with DLTS is found to be a reasonable agreement with those determined by other methods.

• 社団法人応用物理学会の論文
• 1979-01-05

著者

• Yoshida Minoru

  Department of Thoracic and Cardiovascular Surgery, Wakayama Medical University School of Medicine

• SUGANO Takuo

  Department of Electrical and Electronic Engineering, Toyo University

• Sugano Takuo

  Department Of Electronic Engineering Faculth Of Engineering The University Of Tokyo

• Yamasaki Kimiyoshi

  Department Of Electronic Engineering Faculth Of Engineering The University Of Tokyo

• Yoshida Minoru

  Departmetn Of Pysics Faculty Of Science Science University Of Tokyo

• Yoshida Minoru

  Department Of Agricultural Chemistry Faculty Of Agriculture Iwate University

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