Studies on Chemically Etched Silicon, Gallium Arsenide, and Gallium Phosphide Surfaces by Auger Electron Spectroscopy
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概要
- 論文の詳細を見る
Effects of various chemical treatments on surface contamination of Si, GaAs, and GaP are studied, especially with respect to two main contaminants, carbon and oxygen, by Auger electron spectroscopy. The ratio of Auger peak-to-peak height of oxygen to that of carbon, [O]/[C], is found to be sensitive to the bonding state of surface atoms to oxygen and small for Si and GaAs surfaces, dipped in HF and without further treatment. The shape of Auger peaks of Si changes due to the bonding state of Si to oxygen and that from Si surfaces etched with HNO_3:HF (100:1) or (1:10) is different from that etched with HNO_3:HF (4:1). Gallium arsenide surfaces etched with HNO_3:HF (25:1) show much larger coverage by carbon and rather smaller coverage by oxygen than those etched with HNO_3 or HNO_3:HF (3:1). Contamination of GaP surfaces is less affected by the change of etchants than St or GaAs surfaces.
- 社団法人応用物理学会の論文
- 1976-07-05
著者
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SUGANO Takuo
Department of Electrical and Electronic Engineering, Toyo University
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Oda Tetsuji
Department Of Electrical Engineering The University Of Tokyo
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Oda Tetsuji
Department Of Electronic Engineering Faculty Of Engineering The University Of Tokyo
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Sugano Takuo
Department Of Electronic Engineering Faculty Of Engineering The University Of Tokyo
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