Chemical Deposition of Mo on Si
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概要
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A good Schottky diode has been obtained by the chemical deposition of Mo on Si. Thermodynamical consideration denotes that the deposition rate of Mo is determined by solid MoCl_3 produced as the intermediate product of H_2 reduction of MoCl_5. If the deposition temperature is above 600℃ theoretical deposition rates agree with experimental results. Mo deposited on Si at 500∼800℃ has the structure of fiber texture oriented to (100). Above 900℃, MoSi_2 is detected by electron diffraction analysis. Between 600 and 800℃, the Mo film of thickness 1000 Å has the resistivity which is very close to its bulk resistivity. By the deposition for 30 min. at 560℃, a good Mo-Si Schottky diode with the same barrier height as previously reported, is obtained. At 600℃, the deposition time must be within 15 min. to get a good Schottky diode. But the barrier height is about 20% higher than that of a diode, fabricated at 560℃.
- 社団法人応用物理学会の論文
- 1968-09-05
著者
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SUGANO Takuo
Department of Electrical and Electronic Engineering, Toyo University
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Yoshida Minoru
Department Of Chemistry St. Marianna University School Of Medicine
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Chou Hsun-kwei
Department Of Electronics Engineering Faculty Of Engineering University Of Tokyo
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NISHI Tateki
Department of Electronics Engineering, Faculty of Engineering, University of Tokyo
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Nishi Tateki
Department Of Electronics Engineering Faculty Of Engineering University Of Tokyo:(present Address) N
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Yoshida Minoru
Department Of Agricultural Chemistry Faculty Of Agriculture Iwate University
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