Beating of the Shubnikov-de Haas Oscillations in GaAs/AlGaAs Quantum-Dot Arrays
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概要
- 論文の詳細を見る
The Shubnikov-de Haas oscillations measured in split-gate quantum-dot arrays are found to exhibit a marked beating behavior, which we attribute to a carrier density variation between the quantum-point-contact leads and the component dots of the array. A simple analysis supports these arguments, revealing that the carrier density in the quantum point contacts vanishes as the array is pinched off. The beating may be suppressed by increasing the measurement current, a behavior which we attribute to the injection of energetic electrons in the source into initially unoccupied Landau levels in the quantum point contacts.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-03-30
著者
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Aoki Nobuyuki
Department Of Electronics And Mechanical Engineering Chiba University
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ANDRESEN Anthony
Center for Solid State Electronics Research & Department of Electrical Engineering, Arizona State Un
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PRASAD Chetan
Center for Solid State Electronics Research & Department of Electrical Engineering, Arizona State Un
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GE Fuding
Center for Solid State Electronics Research & Department of Electrical Engineering, Arizona State Un
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BIRD Jonathan
Center for Solid State Electronics Research & Department of Electrical Engineering, Arizona State Un
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FERRY David
Center for Solid State Electronics Research & Department of Electrical Engineering, Arizona State Un
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RISAKI Tomomitu
Department of Electrical and Electronic Engineering, Toyo University
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ISHIBASHI Kohji
Semiconductors Laboratory, RIKEN
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SUGANO Takuo
Department of Electrical and Electronic Engineering, Toyo University
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Aoyagi Yoshinobu
Semiconductor Laboratory Riken The Institute For Physical And Chemical Research
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Lin Li-hung
Department Of Materials Science Chiba University
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OCHIAI Yuichi
Department of Electronics and Mechanical Engineering, Chiba University
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Ochiai Yuichi
Department of Materials Technology, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
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Lin Li-Hung
Department of Materials Technology, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
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Prasad Chetan
Center for Solid State Electronics Research & Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287-6206, USA
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Bird Jonathan
Center for Solid State Electronics Research & Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287-6206, USA
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Aoki Nobuyuki
Department of Materials Technology, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
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Risaki Tomomitu
Department of Electrical and Electronic Engineering, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585, Japan
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Ferry David
Center for Solid State Electronics Research & Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287-6206, USA
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Ge Fuding
Center for Solid State Electronics Research & Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287-6206, USA
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Andresen Anthony
Center for Solid State Electronics Research & Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287-6206, USA
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Aoyagi Yoshinobu
Semiconductors Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0106, Japan
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