Ordered Structure and Ion Migration in Silicon Dioxide Films

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概要

• 論文の詳細を見る

• Structure of silicon dioxide films thermally grown on silicon was studied with electron diffraction and the effect of impurities intentionally added during oxidation was examined. The local polycrystallization of SiO_2 films is enhanced by protons or boron atoms. Phosphor, on the contrary, suppresses the crystallization and antimony behaves in a similar way. Gallium has no influence on the phenomenon. Diffusion coefficient of sodium ions in these samples was also measured and activation energy for diffusion was obtained 1.0 to 1.4eV which coincides well with those reported by other workers. These values are not affected by the presence of impurities or structural anomalies, but the diffusion coefficient itself is large where the crystallization is marked. Phosphor immoblized sodium ions and the diffusion of protons was observed instead. These effects of impurities can be explained considering their valency and sites they occupy in SiO_2 network.

• 社団法人応用物理学会の論文
• 1968-07-05

著者

• SUGANO Takuo

  Department of Electrical and Electronic Engineering, Toyo University

• Kudo Kiyoshi

  Ibaraki Annex Of The Electrical Communication Lab. Nippon Telegraph And Telephone Public Corp.

• HOH Koitiro

  Department of Electronics Engineering, Faculty of Engineering, University of Tokyo

• HISHINUMA Noboru

  Ibaraki Annex of the Electrical Communication Lab., Nippon Telegraph and Telephone Public Corp.

• Hishinuma Noboru

  Ibaraki Annex Of The Electrical Communication Lab. Nippon Telegraph And Telephone Public Corp.

• Hoh Koitiro

  Department Of Electronics Engineering Faculty Of Engineering University Of Tokyo

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