Effects of PAs_xN_y Deposition Conditions and the Cd Concentration in the Substrates on the Characteristics of In_<0.53>Ga_<0.47>As Metal-Insulator-Semiconductor Field Effect Transistors : Special Section : Solid State Devices and Materials 2 : III-V Comp
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概要
- 論文の詳細を見る
Effects of the deposition temperature of PAs_xN_y films and the Cd concentration in the substrates on the electrical characteristics of In_<0.53>Ga_<0.47>as metal-insulator-semiconductor field effect transistors were investigated. It was found that the effective mobility of electrons increases with the decreases of the deposition temperature of the film and the decrease of Cd concentration in the substrate, and has exceeded 2000 cm_2/Vs at room temperature. The drain current drift of the MISFETs was suppressed within 10% of the initial value in 10^3 s, by using in-situ vapor phase etching before the film deposition.
- 社団法人応用物理学会の論文
- 1988-12-20
著者
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SUGANO Takuo
Department of Electrical and Electronic Engineering, Toyo University
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IWASE Yoshimichi
Department of Physics, Tokai University
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Sugano Takuo
Department Of Electronic Engineering University Of Tokyo
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Kawahara Akifumi
Department Of Electronic Engineering University Of Tokyo
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ARAI Fusako
Department of Electronic Engineering, University of Tokyo
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Arai Fusako
Department Of Electronic Engineering University Of Tokyo
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Iwase Yoshimichi
Department Of Electronic Engineering University Of Tokyo
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