Thermodynamical Calculation and Experimental Confirmation of the Density of Hole Traps in SiO_2 Films

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概要

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• Assuming the oxygen vacancy as a point defect, the density of oxygen vacancies in SiO_2 films thermally grown on Si substrates is calculated thermodynamically, taking into account the strain incorporated into SiO_2 films, and the calculated density of oxygen vacancies has been found to be in good agreement with the measured density of hole traps. The density of oxygen vacancies is thermodynamically predicted to decrease at lower oxidation temperature, and, consistently, it is experimentally shown that the density of hole traps is decreased from 2×10^<12> cm^<-2> to 1×10^<12> cm^<-2> by lowering the oxidation temperature from 1000℃ to 900℃.

• 社団法人応用物理学会の論文
• 1991-12-01

著者

• SUGANO Takuo

  Department of Electrical and Electronic Engineering, Toyo University

• Asada Kunihiro

  Department Of Electrical And Electronic Engineering Tokyo University

• Ohji Yuzuru

  Central Research Laboratory Hitachi

• Ohmameuda Toshiaki

  Department Of Information And Image Sciences Chiba University

• Miki Hiroshi

  Department Of Chemistry Nagaoka University Of Technology

• OHJI Yuzuru

  Central Research Laboratory, Hitachi

• OHMAMEUDA Toshiaki

  Department of Electronic Engineering, The University of Tokyo

• MIKI Hiroshi

  Department of Electronic Engineering, The University of Tokyo:(Present address)Central Research Laboratory

• Miki Hiroshi

  Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

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