Physical and Technological Limits in Size of Semiconductor Devices : E-2: PHYSICAL AND TECHNOLOGICAL LIMITS OF HIGH-DENSITY INTERGRATION
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- Beating of the Shubnikov-de Haas Oscillations in GaAs/AlGaAs Quantum-Dot Arrays
- Advantages of the Asymmetric Tunnel Barrier for High-Density Integration of Single Electron Devices ( Quantum Dot Structures)
- Single Electron Device with Asymmetric Tunnel Barriers
- A Perspective on Next-Generation Silicon Devices
- Electron Mobility in In_Ga_xAs Epitaxial Layer
- Calculations of Energy Levels of Oxygen and Silicon Vacancies at the Si-SiO_2 Interface
- Fabrication of Josephson Weak Links Using Electron Beam Lithography and Ion-Etching, and Proposal of a New Single Flux Quantum Logic : C-2: JOSEPHSON DEVICES
- Interface Analysis of Al_2O_3/InP Structure Prepared by Molecular Beam Deposition
- Fabrication of Step-Edge Junctions on the Concave or Convex Side of YBa_2Cu_3O_ Film
- Magnetic and Electrical Properties of Vacuum-Deposited CdCr_2Se_4 Thin Film
- Studies on Chemically Etched Silicon, Gallium Arsenide, and Gallium Phosphide Surfaces by Auger Electron Spectroscopy
- Ordered Structure and Ion Migration in Silicon Dioxide Films
- Hall Mobility of Electrons in Silicon Surface Inversion Layers
- Galvanomagnetic Effects in Silicon Surface Inversion Layers
- Mobility of Magnetic Domain Wall of Strip Domain in Garnet Crystal : Computer Simulation and Measurement : B-2: BUBBLE DEVICES (II)
- Optical Properties of Vacuum-Deposited CdCr_2Se_4 Thin Film
- Effects of PAs_xN_y Deposition Conditions and the Cd Concentration in the Substrates on the Characteristics of In_Ga_As Metal-Insulator-Semiconductor Field Effect Transistors : Special Section : Solid State Devices and Materials 2 : III-V Comp
- Deep Level Transient Spectroscopy of Bulk Traps and Interface States in Si MOS Diodes
- Epitaxial Growth of SiC Film on Silicon Substrate and Its Crystal Structure
- Fabrication of Bi_2Sr_2CaCu_2O_x High T_c Superconducting Film with H_2O Assisted Metalorganic Chemical Vapor Deposition
- Vapor Deposition of Silicon Nitride Film on Silicon and Properties of MNS Diodes
- Physical and Technological Limits in Size of Semiconductor Devices : E-2: PHYSICAL AND TECHNOLOGICAL LIMITS OF HIGH-DENSITY INTERGRATION
- Forward Characteristics of Si Schottky Diodes
- Plasma-Oxidized Tunnel Barrier of Nb/Nb Josephson Junctions with Copper Interlayer
- Scattering of Electrons by Potential Clusters in Ternary Alloy Semiconductor
- Proposal for Criterion on Deformation of III-V Ternary Alloy Crystal Lattice
- Chemical Deposition of Mo on Si
- Magnetic Modulation of Critical Current in MB DC-SQUID
- Fabrication of Si-Mo-Si Three Layer Structure and Its Current Transfer Characteristics
- Anodization of Silicon in RF Induced Oxygen Plasma : A-2: MOS DEVICES/BASIC ASPECTS
- Hot Electron-Phonon Interaction in Metals
- Defect-Free Reactive Ion Etching of Silicon by SiF_4/Cl_2 Plasma
- Thermodynamical Calculation and Experimental Confirmation of the Density of Hole Traps in SiO_2 Films
- Beating of the Shubnikov-de Haas Oscillations in GaAs/AlGaAs Quantum-Dot Arrays
- Cascade Model for Reduction of Field-Effect Mobility of Electrons in Lightly Doped Channel of Submicron Gate Si Thin-Film Field-Effect Transistors
- Advantages of the Asymmetric Tunnel Barrier for High-Density Integration of Single Electron Devices