Fabrication of Bi_2Sr_2CaCu_2O_x High T_c Superconducting Film with H_2O Assisted Metalorganic Chemical Vapor Deposition
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概要
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With the objective of the deposition of Bi_2Sr_2CaCu_2O_x (BSCCO(2212)) films at low temperature, the metalorganic chemical vapor deposition (MOCVD) has been carried out and c-axis oriented BSCCO(2212) films on MgO(001) substrates were obtained at 550℃ and 600℃. When water vapor was added into the reactor, the crystallization of deposited films changed in relation to the partial pressure of water vapor. The more H_2O was supplied, the less BSCCO(2212) crystal tended to be formed at 600℃, and the opposite tendency was found at 550℃.
- 社団法人応用物理学会の論文
- 1992-11-15
著者
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SUGANO Takuo
Department of Electrical and Electronic Engineering, Toyo University
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Satoh Mitsuru
Department Of Electronic Engineering The University Of Tokyo
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Asada Kunio
Department Of Electronic Engineering The University Of Tokyo
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Nishikawa Tsuyoshi
Department Of Electronic Engineering The University Of Tokyo
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