Nb/AlO_x/Nb Josephson Tunnel Junctions Using Electron Beam Evaporation : Electrical Properties of Condensed Matter
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概要
- 論文の詳細を見る
Niobium / aluminum-oxide / niobium Josephson tunnel junctions have been fabricated using electron beam evaporation to form all-metal films in a high vacuum system. A quality factor, V_m(the product of the maximum dc Josephson current and the subgap resistance defined at 2 mV) between 36-37 mV, has been obtained for the best junctions of a 6 nm-thick Al layer by cooling down the surface of the base electrode for 100 minutes under a high background pressure, before the deposition of aluminum, after the formation of the base niobium electrode. An array of 80 series-connected junctions has also been fabricated using the selective niobium anodization process and the planarization process. The current-voltage characteristics of the array showed a standard deviation of the maximum dc Josephson current of 3.3%.
- 社団法人応用物理学会の論文
- 1988-07-20
著者
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NAKAYAMA Akiyoshi
Department of Internal Medicine, Division of Rheumatology, National Defense Medical College
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INOUE Atsuki
Department of Electronic Engineering, Faculty of Engineering, University of Tokyo
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OKABE Yoichi
Department of Electronic Engineering, Faculty of Engineering, University of Tokyo
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Inoue A
Av & Network Development Center Pioneer Corporation
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Okabe Yoichi
Department Of Electronic Engineering Faculty Of Engineering University Of Tokyo
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Okabe Yoichi
Department Of Electrical And Electronics Engineering University Of Tokyo
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Nakayama Akiyoshi
Department Of Internal Medicine Division Of Rheumatology National Defense Medical College
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