Optical, Electrical and Structural Investigations of the Transition from Amorphous to Microcrystalline Silicon

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1994-11-15

著者

• Sugano Takeshi

  Department Of Electrical Engineering Faculty Of Engineering Osaka University

• AOYAGI Yoshinobu

  The Institute of Physical and Chemical Research

• Aoyagi Y

  Semiconductor Laboratory Riken The Institute For Physical And Chemical Research

• ZHAO Xinwei

  The Institute of Physical and Chemical Resarch

• SCHOENFELD Olaf

  The Institute of Physical and Chemical Resarch

• SCHOENFELD Olaf

  Frontier Research Program, The Institute of Physical and Chemical Research (RIKEN)

• HEMPEL Thomas

  Department of Experimental Physics, Magdeburg Universiry

• ZHAO Xinwei

  Frontier Research Program, The Institute of Physical and Chemical Research (RIKEN)

• SUGANO Takuo

  Frontier Research Program, The Institute of Physical and Chemical Research (RIKEN)

• AOYAGI Yoshinobu

  Frontier Research Program, The Institute of Physical and Chemical Research (RIKEN)

• Aoyagi Y

  Riren (the Institute Of Physical And Chemical Research)

• Aoyagi Y

  The Institute Of Physical And Chemical Research

• Aoyagi Yoshinobu

  Frontier Research Program Riken

• Aoyagi Yoshinobu

  The Institute Of Physical And Chemical Research (riken):microelectronics R & D Center Chinese Ac

• Hempel Thomas

  Department Of Experimental Physics Magdeburg Universiry

• Aoyagi Y

  Inst. Physical And Chemical Res. Riken Wako Jpn

• Sugano T

  Nanoelectronic Materials Laboratory Frontier Research Program Riken

• Zhao X

  Peking Univ. Beijing Chn

関連論文

• Fabrication of Multilayer Structures and Ramp-Edge Josephson Junctions with (Hg,Re)Ba_2CaCu_2O_y Films
• Fabrication of Multilayer Structures and Ramp-Edge Josephson Junctions with (Hg,Re)Ba2CaCu2Oy Films
• (Hg, Re)Ba_2CaCu_2O_y [100]-Tilt Grain Boundary Josephson Junctions with High Characteristic Voltages
• Noise Properties of (Hg_Re_)Ba_2CaCu_2O_y Dc Superconducting Quantum Interference Device on (LaAlO_3)_-(SrAl_Ta_O_3)_ Substrates : Superconductors
• Characterization of GaAs and AlGaAs layers grown by laser atomic layer epitaxy
• New Fabrication Technique of Quantum Wire Structures with Dimensions Precisely Controlled by the CBE Method
• Effects of an Electric Field on the Decay Time of Luminescence from a GaAs/Ga_Al_As Multi-Quantum-Well Structure
• Transient Characteristics of Luminescence from GaAs/Ga_Al_As Multi-Quantum-Well Structure under Resonant Excitation
• Characteristics of the Time-Resolved Photoluminescence in Microcrystalline Si
• Effect of Electric Field on Transient Characteristics of Luminescence from GaAs/Ga_Al_As Multi-Quantum-Well Structure
• Temperature Dependence of Decay Time of Photoluminescence from GaAs/Ga_Al_As Multi Quantum Well Structures
• Transient Characteristics of Photoluminescence from GaAs/Ga_Al_As Single Quantum Well Structure
• Lifetime and diffusion coefficient of carriers in X-ray irradiated a-Si:H
• Determination of Reaction Constant of Exciton-Exciton Collision by Absorption Measurement
• High-Power Subpicosecond Pulse Generation in Near-IR Region by Cavity-Dumped Passive and Synchronous Hybrid Mode-Locking System
• Tunable Subpicosecond Pulse Generation in near IR Region from OX-725 Dye Laser by Passive and Synchronous Hybrid Modelocking Method
• A Tunable Picosecond UV Dye Laser Pumped by the Third Harmonic of a Nd: YAG Laser
• Group Velocity and Dispersion Relation of Polariton Wave-Packet in CdS
• 31a-YJ-11 Many-body effects in GaN quantum dots
• Magnetic Field in Direct- and Indirect-Gap Semiconductor Quantum Dots
• Laser Surface Cleaning in Air: Mechanisms and Applications
• Growth of Ultrathin Silver Films by Excimer-Laser-Induced Decomposition of Silver Acetate in Air
• Excimer-Laser Removal of SiO_2 Patterns from GaAs Substrates
• Fourier-Jacobi Expansion of Eisenstein Series on Unitary Groups of Degree Three
• Optical, Electrical and Structural Investigations of the Transition from Amorphous to Microcrystalline Silicon
• Observation of Direct Transitions in Silicon Nanocrystallites
• Violet and Blue Light Emissions from Nanocrystalline Silicon Thin Films
• Effect of a Magnetic Field on the Excitonic Luminescence Decay Time in a GaAs-Al_xGa_As Quantum Well
• Modeling of Electron Transport in Corrugated Quantum Wires
• Ballistic Weak Localization and Wave Function Scarring in Quantum Wires
• Is There a Magnetic-Field-Induced Breakdown in the Universality of Conductance Fluctuations?
• Fabrication of Periodic Structures in GaAs by Focused-Ion-Beam Implantation : Microfabrication and Physics
• Fabrication of Periodic Structures in GaAs by Focused-Ion-Beam Implantation
• 30 nm Line Fabrication on PMMA Resist by Fine Focused Be Ion Beam
• Electronic Properties of Polysilane Calculated with the Real-Time Real-Space Higher-Order Finite-Difference Method
• Fast Algorithm for Calculating Two-Photon Absorption Spectra by Real-Time Real-Space Higher-Order Finite-Difference Method
• Near-Field Scanning Optical Microscopy of Quantum Dot Arrays
• Probing the Discrete Level Spectrum of Open Quantum Dots
• Phase Breaking of Coherent Electron Waves in Dot Array Systems ( Quantum Dot Structures)
• The Role of Electron Phase Coherence in Quantum Transport through Open Ballistic Cavities ( Quantum Dot Structures)
• Quantum Transport in Single and Multiple Quantum Dots ( Quantum Dot Structures)
• Carrier Transport in Nanodevices
• Trajectory Transition Due to Gate Depletion in Corrugation Gated Quantum Wires
• Carrier Transport in Nanoscale Structures
• Electron Wave Interference in Ballistic and Quasi-Ballistic Nanostructures
• Zero-Current Voltage Fluctuations in Quantum Dots at High Magnetic Fields
• Study of Scattering Processes in Quantum Wires by a Correlation Field Analysis of the Phase Coherent Interferences
• The Magnetic Field Dependent Characteristics of Conductance Fluctuations in Ballistic Quantum Dots
• Experimental Determination of the Conduction Width in Quasi Ballistic Wires
• Fabrication and Anisotropic Transport Properties of (Hg, Re) Ba_2CaCu_2O_y Epitaxial Thin Films on Vicinal Substrates with Buffer Layers
• Microfabricated Submicron Al-Filament Biprism as Applied to Electron Holography : Micro/nanofabrication and Devices
• Microfabricated Submicron Al-Filament Biprism as Applied to Electron Holography
• Induced Defects in GaAs Etched by Low Energy Ions in Electron Beam excited Plasma(EBEP) System : Etching and Deposition Technology
• Quantum dot transport of semiconducting single-wall carbon nanotubes
• 招待講演 Carbon nanotubes for quantum-dot devices
• 招待講演 Carbon nanotubes for quantum-dot devices
• Quantum Dots in Carbon Nanotubes
• Characterization of Small Superconducting Rings and Its Possible Application to New Single Flux Quantum Devices
• Observation of Aharonov-Bohm Oscillations in the Magnetoresistance of a GaAs/AlGaAs Quantum Dot
• The Transmission Properties of Quantum Dots at High Magnetic Fields
• Conductance Fluctuations in GaAs/AlGaAs Narrow Wires in Quasi-Ballistic Regime
• Epitaxial Growth of Poly(dimethylsilane) Evaporated Films on Poly(tetrafluoroethylene) Layer
• Room Temperature Ultraviolet Electroluminescence from Evaporated Poly(dimethylsilane) Film
• Digital Etching Using KrF Excimer Laser: Approach to Atomic-Order-Controlled Etching by Photo Induced Reaction
• New Etching System with a Large Diameter Using Electron Beam Excited Plasma
• Direct Observation of Self-Limiting Gallium Deposition on GaAs during Laser-Atomic Layer Epitaxial Processing
• Reversible Reconstruction Changes in GaAs Surfaces due to Hydrogen Termination
• Study of Surface Processes in the Digital Etching of GaAs
• Radical-Beam-Induced Surface Reaction Processes of Porous Si
• Development and Applications of a Compact Electron Cyclotron Resonance Source : Etching
• Development and Applications of a Compact Electron Cyclotron Resonance Source
• The Irradiation Effects of an Oxygen Radical Beam on the Preparation of Superconducting Thin Films
• Composition Change of Indium Oxide Film by Triethylgallium Irradiation Prepared for In Situ Selective Epitaxy Use
• Thin Gallium Oxide Film Deposited in Vacuum for In Situ Process Use
• Characterization of La-doped YBCO superconducting films deposited by DC magnetron sputtering at various off-axis geometries
• Properties of (Hg_Re_)Ba_2CaCu_2Oy Grain Boundary Junctions on SrTiO_3 and (LaAlO_3)_-(SrAl_Ta_O_3)_ Substrates with Different Misorientation Angles
• Advantages of the Asymmetric Tunnel Barrier for High-Density Integration of Single Electron Devices ( Quantum Dot Structures)
• Single Electron Device with Asymmetric Tunnel Barriers
• A Perspective on Next-Generation Silicon Devices
• Alignment Control of a Liquid Crystal on a Photosensitive Polyvinylalcohol Film
• Enhancement of the 15.4 nm Line of the Lithiumlike Aluminum Recombining Plasma Laser using a Half Cavity
• Enhancement of Soft X-Ray Emission from Al Plasma by Pulse Train Laser Irradiation
• Observation of Soft X-Ray Amplified Spontaneous Emission in a Recombining Si Plasma Pumped by a Low-Power Laser
• Layer-By-Layer Controlled Digital Etching by Means of an Electron-Beam-Excited Plasma System : Etching and Deposition Technology
• Layer-By-Layer Controlled Digital Etching by Means of an Electron-Beam-Excited Plasma System
• Soft X-Ray Lasing in an Al Plasma Produced by a 6 J Laser
• New High Current Low Energy Ion Source
• Maskless Fabrication of High Quality DFB Laser Gratings by Laser Induced Chemical Etching
• Atomic Layer Epitaxy of AlAs Using Dimethylethylamine Alane
• Anti-Surfactant in III-Nitride Epitaxy : Quantum Dot Formation and Dislocation Termination
• Influencs of Surface V/III Ratio on the Film Quality during the GaN Growth in Gas-Source Molecular Beam Epitaxy
• Highly Collimated Laser Beam from Tunable Distributed-Feedback Dye Laser
• Blazing of Holographic Grating by Ion Etching Technique
• Purification of Single-Wall Carbon Nanotubes Synthesized from Alcohol by Catalytic Chemical Vapor Deposition
• Temperature Tuning of 4-Methylumbelliferone Dye Laser
• Photoluminescence Intensity Enhancement due to Screening of Piezoelectric Field in Si-Doped G227aN/AlGaN Single-Quantum-Wells
• Wavelength Control of Thin Film DFB Laser by Changing Film Thickness
• Purification of Single-Wall Carbon Nanotubes Synthesized from Alcohol by Catalytic Chemical Vapor Deposition
• Characteristics of the Time-Resolved Photoluminescence in Microcrystalline Si
• Soft X-ray lasing in Al plasma produced by a low power laser.

もっと見る 閉じる

スポンサーリンク