Epitaxial Growth of Poly(dimethylsilane) Evaporated Films on Poly(tetrafluoroethylene) Layer
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-02-15
著者
-
Hattori Reiji
Department of Thoracic and Cardiovascular Surgery, Kansai Medical University
-
Sugano Takeshi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
-
Hattori Reiji
Department Of Electrical Engineering Faculty Of Engineering Osaka University
-
SHIRAFUJI Junji
Department of Electrical Engineering, Faculty of Engineering, Osaka University
-
AOKI Yukio
Department of Electrical Engineering, Faculty of Engineering, Osaka University
-
FUJIKI Tsuyoshi
Advanced Technology Center, Osaka Gas Co., Ltd.
-
Aoki Yukio
Department Of Electrical Engineering Faculty Of Engineering Osaka University
-
Fujiki T
Osaka Gas Co. Ltd. Osaka Jpn
-
Shirafuji J
Fukui Univ. Technol.
-
Shirafuji Junji
Department Of Electrical And Electronic Engineering
関連論文
- PE-564 Comparison of Safety of Mesenchymal Stem Cell Transplantation between Intracoronary Infusion and Direct Injection in Rats with Myocardial Infarction(Regeneration (angiogenesis/myocardial regeneration)-3, The 71st Annual Scientific Meeting of the Ja
- Role of Mechanical Stress in the Form of Cardiomyocyte Death During the Early Phase of Reperfusion
- Fabrication of Multilayer Structures and Ramp-Edge Josephson Junctions with (Hg,Re)Ba_2CaCu_2O_y Films
- Fabrication of Multilayer Structures and Ramp-Edge Josephson Junctions with (Hg,Re)Ba2CaCu2Oy Films
- (Hg, Re)Ba_2CaCu_2O_y [100]-Tilt Grain Boundary Josephson Junctions with High Characteristic Voltages
- Noise Properties of (Hg_Re_)Ba_2CaCu_2O_y Dc Superconducting Quantum Interference Device on (LaAlO_3)_-(SrAl_Ta_O_3)_ Substrates : Superconductors
- PE-564 Comparison of Safety of Mesenchymal Stem Cell Transplantation between Intracoronary Infusion and Direct Injection in Rats with Myocardial Infarction(Regeneration (angiogenesis/myocardial regeneration)-3, The 71st Annual Scientific Meeting of the Ja
- Magnetic Field in Direct- and Indirect-Gap Semiconductor Quantum Dots
- Fourier-Jacobi Expansion of Eisenstein Series on Unitary Groups of Degree Three
- Optical, Electrical and Structural Investigations of the Transition from Amorphous to Microcrystalline Silicon
- Observation of Direct Transitions in Silicon Nanocrystallites
- Violet and Blue Light Emissions from Nanocrystalline Silicon Thin Films
- Effect of a Magnetic Field on the Excitonic Luminescence Decay Time in a GaAs-Al_xGa_As Quantum Well
- A New Type of Tunnel-Effect Transistor Employing Internal Field Emission of Schottky Barrier Junction
- Numerical Simulation of Tunnel Effect Transistors Employing Internal Field Emission of Schottky Barrier Junction
- High-Field Electron Transport in a-Si:H
- FRS-057 IGF-1 Increases Engraftment of Transplanted Mesenchymal Stem Cells and Improves Cardiac Function without Differentiation in Rats with Myocardial Infarction(Regeneration Research in Cardiovascular Medicine (M) FRS12,Featured Research Session,The 70
- Phosphatidylinositol-3 Kinase Differentially Regulates Cardiomyogenic Differentiation of Bone Marrow Stem Cells in Single Culture and Co-culture with Cardiomyocytes(Transplantation (M), The 69th Annual Scientific Meeting of the Japanese Circulation Societ
- PJ-603 Phosphatidylinositol-3 Kinase-dependent Cell-to-cell Interactions Promote Growth and Differentiation of Bone Marrow Cells in Vitro(Transplantation 2 (M) : PJ101)(Poster Session (Japanese))
- Fabrication and Anisotropic Transport Properties of (Hg, Re) Ba_2CaCu_2O_y Epitaxial Thin Films on Vicinal Substrates with Buffer Layers
- Experimental Study of Pulmonary Artery Infusion With Cisplatin in a Solitary Pulmonary Tumor Model using a Rat Colorectal Adenocarcinoma Cell Line
- Freehand Cryopreserved Mitral Valve Allograft With Flexible Ring in the Pig
- Epitaxial Growth of Poly(dimethylsilane) Evaporated Films on Poly(tetrafluoroethylene) Layer
- Room Temperature Ultraviolet Electroluminescence from Evaporated Poly(dimethylsilane) Film
- Digital Etching Using KrF Excimer Laser: Approach to Atomic-Order-Controlled Etching by Photo Induced Reaction
- Direct Observation of Self-Limiting Gallium Deposition on GaAs during Laser-Atomic Layer Epitaxial Processing
- Deep Level Transient Spectroscopy Study of Staebler-Wronski Effect in a-Si:H
- Negative Staebler-Wronski Effect in Undoped a-Si:H
- Saturation of Optical Degradation in a-Si:H Films with Different Morphologies : Condensed Matter
- Preparation of a-Si:H Films Resistive to the Staebler-Wronski Effect : Semiconductors and Semiconductor Devices
- Optical Degradation of a-Si:H films with Different Morphology : Semiconductors and Semiconductor Devices
- Characterization of La-doped YBCO superconducting films deposited by DC magnetron sputtering at various off-axis geometries
- Properties of (Hg_Re_)Ba_2CaCu_2Oy Grain Boundary Junctions on SrTiO_3 and (LaAlO_3)_-(SrAl_Ta_O_3)_ Substrates with Different Misorientation Angles
- Advantages of the Asymmetric Tunnel Barrier for High-Density Integration of Single Electron Devices ( Quantum Dot Structures)
- Single Electron Device with Asymmetric Tunnel Barriers
- A Perspective on Next-Generation Silicon Devices
- Alignment Control of a Liquid Crystal on a Photosensitive Polyvinylalcohol Film
- Characterization of InGaAs Phosphidized by a Plasma Process
- Deep Electron Traps in n-InP Induced by Plasma Exposure
- Effect of Hydrogen Plasma Treatment on n-InP Surfaces
- Characteristics of Electron Trap Induced in n-InP by Hydrogen Plasma Exposure
- Effect of Phosphine on Plasma-Induced Traps in n-InP
- Measurement of Surface Fermi Level in Phosphidized GaAs
- Evidence for Phosphorus Passivation of Plasma-Induced Damage at GaAs Surface Probed by EL2 Traps
- Oxide-Voltage and Its Polarity Dependence of Interface-State-Generation Efficiency in (100) n-Si Metal/Oxide/Semiconductor Capacitors
- Capture Cross Section of Electric-Stress-Induced Interface States in (100) Si Metal/Oxide/Semiconductor Capacitors
- Effects of Phosphine-Plasma Treatment on Characteristics of Au/n-InP Schottky Junctions
- Hydrogenation of InP by Phosphine Plasma
- Electron-Irradiation Effect on Emission Band Associated with Carbon Acceptors in n-GaAs
- Photoluminescence Studies in Irradiated Si-Doped Gallium Arsenide
- Effects of Electron Irradiation on Photo-luminescence Spectra of Si-Doped Melt-Grown n-GaAs
- Time-of-Flight Measurement of Undoped Glow-Discharged a-Si:H
- Electron Transport in Hydrogenated Amorphous Silicon Prepared by rf Sputtering : II-1: AMORPHOUS FILM PREPARATION AND CHARACTERIZATION (I)
- Photoluminescence and Optical Properties of Ge_Se_x Glasses
- Transport of Photoexcited Carriers in Evaporated Ge_xSe_ Glass Films
- Dispersive Transport in Hydrogenated a-Si Prepared by rf Sputtering : III-2: AMORPHOUS SOLAR CELLS : Characterization
- Fabrication of Open-Top Microchannel Plate Using Deep X-Ray Exposure Mask Made with Silicon On Insulator Substrate
- Observation of On-Chip Electrophoresis Microcapillary Using Confocal Laser Scanning Microscopy
- Film Density Dependence of Polymethylmethacrylate Ablation under Synchrotron Radiation Irradiation
- Effect of Surface Phosphidization on GaAs Schottky Barrier Junctions
- Optimization of Single Crystal Preparation of Bi_2Sr_2CaCu_2O_x Superconductor by the Travelling Solvent Floating Zone Method
- Internal Electron Emission in Phosphorus-Doped Polycrystalline Diamond Field Emitters
- Characterization and Field Emission of Sulfur-Doped Boron Nitride Synthesized by Plasma-Assisted Chemical Vapor Deposition
- InSb Carrier Lifetime in High Electric Field
- Characterization of In_xGa_As_P_y Epitaxial Layers and Relation to Lattice Matching : B-5: COMPOUND SEMICONDUCTOR DEVICE TECHNOLOGY
- Non-Maxwellian Electron Distribution Function in n-GaAs Determined from Electric Field-Dependent Photoluminescence Spectrum
- Electrical and Optical Characteristic of Liquid Phase Epitaxial In_xGa_As
- Valley Transfer of Hot Electrons in GaAs and Related Mixed Crystals (Selected Topics in Semiconductor Physics) -- (Transport)
- Liquid Epitaxial Growth and Characterization of Cr-Doped In_xGa_As
- Energy Relaxation Effect of Hot Electrons in GaAs
- Relaxation Effects Due to Energy Loss and Intervalley Transfer of Hot Electrons in n-GaAs
- Velocity-Field Characteristics in III-V Mixed Crystals, GaSb_xAs_ and In_xGa_As
- Temperature Dependence of the Velocity-Field Characteristic in n-Type GaAs
- Microwave Measurement of the Velocity-Field Characteristics in n-Type Gallium Arsenide
- Temperature Dependence of the Velocity-Field Characteristics of n-Type Gallium Arsenide
- Recombination-Enhanced Annealing of Gamma-Ray Induced Defects in GaAs_P_x
- Negative Photoconductivity in n-InSb under Transverse Magnetic Field
- Negative Photoconductivity in n-InSb under Transverse Magnetic Field
- Growth by Travelling Heater Method and Chracteristic of Undoped High-Resistivity CdTe
- High Purity CdTe and Its Application to Radiation Detectors : B-5: SENSING DEVICES
- High-Purity CdTe Single Crystals Grown from Solutions
- Annealing Behavior of Defects in Electron-Irradiated p-Type CdTe
- Edge and Donor-Acceptor Pair Emissions in Cadmium Telluride
- Effect of Electron Irradiation on Edge Emission Spectra in CdTe
- Barrier Heights of Schottky Junctions on n-InP Treated with Phosphine Plasma
- Schottky Barrier Height of Phosphidized InGaAs
- Frequency-Dependent Conductivity in Polycrystalline Chemical Vapor Deposited Diamond Films
- Flux Creep, Pinning Potential and Critical Current Density in Bi_2Sr_2Ca_1Cu_2O_x Single Crystals
- Formation of InP Metal-Insulator-Semiconductor Schottky Junctions by UV Laser-Induced Photolytic Process of Phosphine Gas
- Substrate Temperature Dependence of Electron Drift Mobility in Glow-Discharged Hydrogenated Amorphous Silicon
- Role of Dangling Bonds in Photo-Induced ESR in Melt-Quenched Ge S Glasses
- Raman and Infrared Studies on Vibrational Properties of Ge-Se Glasses
- Improvement of Dark Current Density of AlInAs/InGaAs Metal-Semiconductor-Metal Photodetector Using Phosphine-Plasma-Treated Schottky Barrier
- Time of Flight Measurement of Carrier Mobility in Ge_xSe_ Glasses
- Thick-Film Odor Sensors Based on Sintered Semiconducting Oxides
- Film Density Dependence of Polymethylmethacrylate Ablation under Synchrotron Radiation Irradiation
- Stereochemical studies of elimination reactions of 2-bromobutane and 2,3-dibromobutane over bivalent-ion exchanged silica gels.
- Stereochemical studies of elimination reactions of 2-bromobutane and 2,3-dibromobutane over alkali-ion exchanged silica gels.
- Observation of On-Chip Electrophoresis Microcapillary Using Confocal Laser Scanning Microscopy
- Fabrication of Open-Top Microchannel Plate Using Deep X-Ray Exposure Mask Made with Silicon On Insulator Substrate