Characteristics of Electron Trap Induced in n-InP by Hydrogen Plasma Exposure
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-03-01
著者
-
Sugino T
Osaka Univ. Osaka Jpn
-
NINOMIYA Hideaki
Department of Neuropsychiatry, Graduate School of Medical Sciences, Kyushu University
-
SHIRAFUJI Junji
Department of Electrical Engineering, Faculty of Engineering, Osaka University
-
Matsuda Kazuko
Faculty Of Engineering Kanazawa University
-
Matsuda K
Univ. Cambridge Cambridge Gbr
-
Matsuda K
Waseda Univ. Tokyo Jpn
-
MATSUDA Koichiro
Horiba, Ltd.
-
SUGINO Takashi
Department of Electrical Engineering, Osaka University
-
Ninomiya Hideaki
Department Of Neuropsychiatry Faculty Of Medicine Kyushu University
-
Sugino T
Department Of Electrical Engineering. Osaha University
-
Ninomiya H
Kyushu Univ. Fukuoka Jpn
-
Shirafuji J
Fukui Univ. Technol.
-
Shirafuji Junji
Department Of Electrical And Electronic Engineering
-
Sugino Takashi
Department Of Basic Pathology Fukushima Medical University
-
NINOMIYA Hideaki
Department of Electrical Engineering, Faculty of Engineering, Osaka University
関連論文
- Bistable Optically Writable Image Memory Using Optical Feedback
- A Novel Shearing Interferometer with Direct Display of Lens Lateral Aberrations
- Reflection Multiple Beam Wedge Plate Shear Interferometry for Lens Testing
- Association analysis of polymorphisms in the upstream region of the human dopamine D4 receptor gene (DRD4) with schizophrenia and personality traits
- A New Type of Tunnel-Effect Transistor Employing Internal Field Emission of Schottky Barrier Junction
- Numerical Simulation of Tunnel Effect Transistors Employing Internal Field Emission of Schottky Barrier Junction
- High-Field Electron Transport in a-Si:H
- Nature of Oxygen Donors and Radiation Defects in Oxygen-Doped Germanium
- Epitaxial Growth of Poly(dimethylsilane) Evaporated Films on Poly(tetrafluoroethylene) Layer
- Room Temperature Ultraviolet Electroluminescence from Evaporated Poly(dimethylsilane) Film
- Deep Level Transient Spectroscopy Study of Staebler-Wronski Effect in a-Si:H
- Negative Staebler-Wronski Effect in Undoped a-Si:H
- Saturation of Optical Degradation in a-Si:H Films with Different Morphologies : Condensed Matter
- Preparation of a-Si:H Films Resistive to the Staebler-Wronski Effect : Semiconductors and Semiconductor Devices
- Optical Degradation of a-Si:H films with Different Morphology : Semiconductors and Semiconductor Devices
- Characterization of GaAs Surfaces Treated with Remote PH_3 Plasma
- Characterization of InGaAs Phosphidized by a Plasma Process
- Behavior of Electron Traps in Phosphidized GaAs by Nitrogen Plasma Treatment
- Improvement of Coupling Efficiency for Passive Alignment of Stacked Multifiber Tapes to a Vertical-Cavity Surface-Emitting Laser Array
- Preparation of Bi-Iron-Garnet Films on Platinized Si Substrate with Bi-Substituted Y-Iron-Garnet Template Layer (レーザーによる薄膜形成と制御小特集号)
- Improvement on Coupling Efficiency for Passive Alignment of Stacked Multi-Fiber Tapes to a Vertical-Cavity Surface-Emitting Laser Array
- Mechanism of Stoichiometric Deposition of Volatile Elements in Multimetal-Oxide Films Prepared by Pulsed Laser Ablation
- Deep Electron Traps in n-InP Induced by Plasma Exposure
- Effect of Hydrogen Plasma Treatment on n-InP Surfaces
- Characteristics of Electron Trap Induced in n-InP by Hydrogen Plasma Exposure
- Surface-Emitting Laser with a Common-Anode Configuration for Application to the Photonic Parallel Memory
- Effect of Phosphine on Plasma-Induced Traps in n-InP
- Measurement of Surface Fermi Level in Phosphidized GaAs
- Second-Order Piezoresistance Coefficients of p-Type Silicon
- Evidence for Phosphorus Passivation of Plasma-Induced Damage at GaAs Surface Probed by EL2 Traps
- Effect of Angular Distribution of Ejected Atoms from a Target on the Uniformity of Thickness and Composition of MoSi_x Sputtering Films
- Second-Order Piezoresistance Coefficients of n-Type Silicon
- Oxide-Voltage and Its Polarity Dependence of Interface-State-Generation Efficiency in (100) n-Si Metal/Oxide/Semiconductor Capacitors
- Capture Cross Section of Electric-Stress-Induced Interface States in (100) Si Metal/Oxide/Semiconductor Capacitors
- Effects of Phosphine-Plasma Treatment on Characteristics of Au/n-InP Schottky Junctions
- Hydrogenation of InP by Phosphine Plasma
- Purification and Properties of a Novel Sulfatase from Pseudomonas testosteroni That Hydrolyzed 3β-Hydroxy-5-cholenoic Acid 3-Sulfate
- Accumulation of Translational Inhibitor durig Multi-Hour Cell-Free Protein Synthesis Reaction Using Rabbit Reticulocyte Lysate
- Purification and Properties of Bile Acid Sulfate Sulfatase from Pseudomonas testosteroni
- High Speed Polymerase Chain Reaction in Constant Flow
- Growth Inhibition of Pseudomonas solanacearum by Substituted 3-Indolepropionic Acids and Related Compounds
- Enzymatic Preparation of Aromatic Ethylamines from Aromatic L-Amino Acids
- A Novel Sulfatase from Pseudomonas testosteroni Hydrolyzing Lithocholic Acid Sulfate
- Indole as an Antibacterial Substance against Pseudomonas solanacearum(Organic Chemistry)
- Electron-Irradiation Effect on Emission Band Associated with Carbon Acceptors in n-GaAs
- Photoluminescence Studies in Irradiated Si-Doped Gallium Arsenide
- Effects of Electron Irradiation on Photo-luminescence Spectra of Si-Doped Melt-Grown n-GaAs
- Time-of-Flight Measurement of Undoped Glow-Discharged a-Si:H
- Electron Transport in Hydrogenated Amorphous Silicon Prepared by rf Sputtering : II-1: AMORPHOUS FILM PREPARATION AND CHARACTERIZATION (I)
- Photoluminescence and Optical Properties of Ge_Se_x Glasses
- Transport of Photoexcited Carriers in Evaporated Ge_xSe_ Glass Films
- Dispersive Transport in Hydrogenated a-Si Prepared by rf Sputtering : III-2: AMORPHOUS SOLAR CELLS : Characterization
- The Effects of Genetic Polymorphisms of CYP2C9 and CYP2C19 on Phenytoin Metabolism in Japanese Adult Patients with Epilepsy : Studies in Stereoselective Hydroxylation and Population Pharmacokinetics
- Reduction of Threading Dislocations in GaN on Sapphire by Buffer Layer Annealing in Low-Pressure Metalorganic Chemical Vapor Deposition
- Auditory P50 obtained with a repetitive stimulus paradigm shows suppression to high-intensity tones
- Effect of Surface Phosphidization on GaAs Schottky Barrier Junctions
- Expression of endothelin system in neuroblastic tumors : close association of endothelin-1 and endothelin B receptor expression with differentiation of tumor cells
- Sodium azide induces necrotic cell death in rat squamous cell carcinoma SCC131
- Regular expression of osteopontin in granular cell tumor : Distinctive feature among Schwannian cell tumors
- 脾臓と脾被膜上の多発性上皮嚢胞, およびCA19-9, CA125と可溶性IL-2受容体の高い血清値
- A study of verbal and spatial information processing using event-related potentials and positron emission tomography
- Optimization of Single Crystal Preparation of Bi_2Sr_2CaCu_2O_x Superconductor by the Travelling Solvent Floating Zone Method
- Internal Electron Emission in Phosphorus-Doped Polycrystalline Diamond Field Emitters
- Characterization and Field Emission of Sulfur-Doped Boron Nitride Synthesized by Plasma-Assisted Chemical Vapor Deposition
- Formation of Rough GaN Surface by Hydrogen Plasma Treatment and Its Application to Field Emitter : Semiconductors
- InSb Carrier Lifetime in High Electric Field
- Characterization of In_xGa_As_P_y Epitaxial Layers and Relation to Lattice Matching : B-5: COMPOUND SEMICONDUCTOR DEVICE TECHNOLOGY
- Non-Maxwellian Electron Distribution Function in n-GaAs Determined from Electric Field-Dependent Photoluminescence Spectrum
- Electrical and Optical Characteristic of Liquid Phase Epitaxial In_xGa_As
- Valley Transfer of Hot Electrons in GaAs and Related Mixed Crystals (Selected Topics in Semiconductor Physics) -- (Transport)
- Liquid Epitaxial Growth and Characterization of Cr-Doped In_xGa_As
- Energy Relaxation Effect of Hot Electrons in GaAs
- Relaxation Effects Due to Energy Loss and Intervalley Transfer of Hot Electrons in n-GaAs
- Velocity-Field Characteristics in III-V Mixed Crystals, GaSb_xAs_ and In_xGa_As
- Temperature Dependence of the Velocity-Field Characteristic in n-Type GaAs
- Microwave Measurement of the Velocity-Field Characteristics in n-Type Gallium Arsenide
- Temperature Dependence of the Velocity-Field Characteristics of n-Type Gallium Arsenide
- Recombination-Enhanced Annealing of Gamma-Ray Induced Defects in GaAs_P_x
- Negative Photoconductivity in n-InSb under Transverse Magnetic Field
- Negative Photoconductivity in n-InSb under Transverse Magnetic Field
- Growth by Travelling Heater Method and Chracteristic of Undoped High-Resistivity CdTe
- High Purity CdTe and Its Application to Radiation Detectors : B-5: SENSING DEVICES
- High-Purity CdTe Single Crystals Grown from Solutions
- Annealing Behavior of Defects in Electron-Irradiated p-Type CdTe
- Edge and Donor-Acceptor Pair Emissions in Cadmium Telluride
- Effect of Electron Irradiation on Edge Emission Spectra in CdTe
- Barrier Heights of Schottky Junctions on n-InP Treated with Phosphine Plasma
- Schottky Barrier Height of Phosphidized InGaAs
- Characterization of AlInAs/InGaAs High Electron Mobility Transistor Wafers Treated with Remote Phosphine Plasma
- Frequency-Dependent Conductivity in Polycrystalline Chemical Vapor Deposited Diamond Films
- Flux Creep, Pinning Potential and Critical Current Density in Bi_2Sr_2Ca_1Cu_2O_x Single Crystals
- Formation of InP Metal-Insulator-Semiconductor Schottky Junctions by UV Laser-Induced Photolytic Process of Phosphine Gas
- Growth of(111)-Oriented Diamond Grains on Hexagonal GaN
- Field Emission Characteristics from Grains and Polycrystalline Films of Phosphorus-Doped Diamond Grown by Chemical Vapor Deposition
- Dielectric Constant of Boron Nitride Films Synthesized by Plasma-Assisted Chemical Vapor Deposition
- Role of Dangling Bonds in Photo-Induced ESR in Melt-Quenched Ge S Glasses
- Raman and Infrared Studies on Vibrational Properties of Ge-Se Glasses
- P300 in response to the subject's own face
- Time of Flight Measurement of Carrier Mobility in Ge_xSe_ Glasses
- Thick-Film Odor Sensors Based on Sintered Semiconducting Oxides