Characterization of AlInAs/InGaAs High Electron Mobility Transistor Wafers Treated with Remote Phosphine Plasma
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概要
- 論文の詳細を見る
Surface modification of AlInAs/InGaAs high electron mobility transistor (HEMT) wafers has been investigated to suppress the diffusion of fluorine (F) atoms into an n-AlInAS layer. The surface of the HEMT wafer is phosphidized using remote phosphine (PH_3) plasma. Secondary ion mass spectroscopy analysis reveals that F diffusion is suppressed even after annealing at 400℃ for 15 min for the phosphidized sample. It is also demonstrated by Hall measurements that no significant reduction in the twodimensional electron density occurs due to annealing. Formation of the modification layer containing phosphorus (P) atoms is shown by X-ray photoelectron spectroscopy analysis. The PH_3 plasma treatment is effective in suppressing the diffusion of F atoms into the n-AlInAS layer.
- 社団法人応用物理学会の論文
- 2002-02-28
著者
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YAMAMOTO Kensuke
Department of Materials Science and Engineering, Nagoya University
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Yamamoto Kensuke
Department Of Applied Physics Tokai University
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Yamamoto Kensuke
Department Of Electrical Engineering. Osaha University
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SUGINO Takashi
Department of Electrical Engineering, Osaka University
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Fujita Norio
Department Of Electrical Engineering. Osaha University
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Sugino Takashi
Department Of Electrical Engineering. Osaha University
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NAKAJIMA Shigeru
Advanced Device Technology Department, Electron Device Division, Sumitomo Electric Industries, Ltd.
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Sugino Takashi
Department Of Basic Pathology Fukushima Medical University
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Nakajima Shigeru
Advanced Device Technology Department Electron Device Division Sumitomo Electric Industries Ltd.
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Fujita Norio
Department Of Cardiology Mutsu General Hospital
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