Enhanced Field Emission of Boron Nitride Nanofilms on Roughened GaN Substrates
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概要
- 論文の詳細を見る
The field-emission (FE) characteristics of boron nitride (BN) nanofilms (8–10 nm) synthesized on n-type gallium nitride (GaN) substrates are investigated. It is demonstrated that GaN is superior to Si mainly due to its lower electron affinity than Si. BN nanofilms on GaN substrates are proved to significantly improve FE in contrast to BN thick films on GaN substrates. Surface roughening is found to be applicable for nanofilms to further improve FE. An optimum turn-on electric field as low as 3.6 V/μm is obtained from the nanofilm on a roughened surface.
- Japan Society of Applied Physicsの論文
- 2003-08-15
著者
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Sugino Takashi
Department Of Electrical Engineering Osaka University
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Sugino Takashi
Department Of Basic Pathology Fukushima Medical University
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Shen W
Laboratory Of Condensed Matter Spectroscopy And Opto-electronic Physics Department Of Physics Shangh
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Shen Wenzhong
Laboratory Of Condensed Matter Spectroscopy And Optoelectronic Physics Department Of Physics Shangha
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Luo Haitao
Department of Electrical Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Funakawa Shingo
Department of Electrical Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Luo Haitao
Department Of Electrical Engineering Osaka University
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Funakawa Shingo
Department Of Electrical Engineering Osaka University
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Shen Wenzhong
Laboratory of Condensed Matter Spectroscopy and Opto-Electronic Physics, Department of Physics, Shanghai Jiao Tong University
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