Imaging Characteristics and Quantum Efficiency: Key Properties for Pixelless Far-Infrared Semiconductor Upconversion Imaging Devices
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概要
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Employing the concept of photon frequency upconversion, we have proposed two types of semiconductor upconverters to realize pixelless far-infrared (FIR) imaging. The upconverter consists of a GaAs FIR homojunction interfacial work-function internal photoemission detector integrated with a GaAs/AlGaAs near-infrared light-emitting diode (LED), or GaN/AlGaN mid-IR/FIR dual-band heterojunction detector with a GaN/AlGaN violet LED. We have studied in detail the dependences of the modulation transfer function and quantum efficiency of the upconverters on various device parameters. Through the application of resonant cavity to the GaAs-based upconverter, we can expect sharp and high-resolution image and improved quantum efficiency. In addition, due to the large light absorption in the GaN/AlGaN heterojunction detector, the quantum efficiency of the GaN-based upconverter is much higher than that of GaAs-based one.
- 2008-01-25
著者
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Wu Leke
Laboratory of Condensed Matter Spectroscopy and Opto-Electronic Physics, Department of Physics, Shanghai Jiao Tong University, 1954 Hua Shan Road, Shanghai 200030, P. R. China
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Shen Wenzhong
Laboratory of Condensed Matter Spectroscopy and Opto-Electronic Physics, Department of Physics, Shanghai Jiao Tong University, 1954 Hua Shan Road, Shanghai 200030, P. R. China
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Shen Wenzhong
Laboratory of Condensed Matter Spectroscopy and Opto-Electronic Physics, Department of Physics, Shanghai Jiao Tong University
関連論文
- Imaging Characteristics and Quantum Efficiency: Key Properties for Pixelless Far-Infrared Semiconductor Upconversion Imaging Devices
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