Capacitance Characteristics in InN Thin Films Grown by Reactive Sputtering on GaAs
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概要
- 論文の詳細を見る
We have carried out room temperature investigation of growth-dependent capacitance-frequency characteristics in InN thin films grown by rf magnetron sputtering on semi-insulating GaAs substrates. A negative capacitance (NC) effect has been observed in these InN thin films. Based on a barrier free model for the InN thin films and a transient current model of charging-discharging and inertial conductance for the InN/GaAs interface states, we attribute the NC effect to the carrier capture and emission at the InN/GaAs interface states, by aid of a comparative study on an InN thin film on sapphire substrate. We have demonstrated the dependence of the NC effect on the growth temperature and the sputtering pressure as well as the bias. The observed NC phenomenon provides experimental evidence for high-speed device applications of InN.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-09-15
著者
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Ogawa Hiroshi
Department Of Anatomy And Neurobiology Kyoto Prefectural University Of Medicine
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Guo Qixin
Department Of Electrical And Electronic Engineering Faculty Of Science And Engineering Saga Universi
-
Pan W
Laboratory Of Condensed Matter Spectroscopy And Optoelectronic Physics Department Of Physics Shangha
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Pan Wei
Laboratory of Condensed Matter Spectroscopy and Optoelectronic Physics, Department of Physics, Shang
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Qian Zhigang
Laboratory of Condensed Matter Spectroscopy and Optoelectronic Physics, Department of Physics, Shang
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Shen Wenzhong
Laboratory of Condensed Matter Spectroscopy and Optoelectronic Physics, Department of Physics, Shang
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Qian Zhigang
Laboratory Of Condensed Matter Spectroscopy And Optoelectronic Physics Department Of Physics Shangha
-
Shen Wenzhong
Laboratory Of Condensed Matter Spectroscopy And Optoelectronic Physics Department Of Physics Shangha
-
Ogawa Hiroshi
Department Of Electrical And Electronic Engineering Faculty Of Science And Engineering Saga Universi
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Shen Wenzhong
Laboratory of Condensed Matter Spectroscopy and Opto-Electronic Physics, Department of Physics, Shanghai Jiao Tong University
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