Cu Electroplating Process with Magnetic Field for Flexible Device
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概要
- 論文の詳細を見る
We have investigated the effect of a magnetic field during Cu electroplating. We have succeeded in a large grain growth without annealing and additives by using a Cu electroplating process involving the vertical application of a magnetic field to an electric field. In addition, we have found that this process is effective in the suppression of Cu oxidation and the incorporation of residual impurities of chlorine into the Cu film. In a conventional Cu electroplating process, annealing is required to obtain a stable Cu film after electroplating. This low temperature process without annealing is useful for the Cu interconnection of flexible devices.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-04-25
著者
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Sugino Takashi
Department Of Basic Pathology Fukushima Medical University
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Aoki Hidemitsu
Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Jeong Jong-Hyeon
Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Jeong Jong-Hyeon
Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Kimura Chiharu
Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Ooi Naoki
Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Watanabe Daisuke
Department of Applied Physics, Graduate School of Engineering, Tohoku University, Aoba-yama 05, Aoba-ku, Sendai 980-8579, Japan
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Watanabe Daisuke
Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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