Luminescence Characteristics and Annealing Effect of Tb-Doped AlBNO Films for Inorganic Electroluminescence Devices
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概要
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Inorganic electroluminescence (EL) devices have attracted attention because of their application in low-power-consumption displays. However, the operating voltage of inorganic EL devices is very high. We have investigated AlBNO films as host materials of the luminescence layer to lower the operating voltage. Moreover, the investigation used Tb as the luminescence center because Tb3+ ions show green luminescence that has a high luminous coefficient. Tb-doped AlBNO films were deposited by RF magnetron sputtering. Cathodoluminescence and photoluminescence show the luminescence due to f--f transition of Tb3+ ions. The luminescence can be attributed to both the energy transfer from the host material to the Tb3+ ions and the direct excitation of Tb3+ ions. In addition, we achieved a drastic increase in the luminescence by an annealing treatment due to an increase in Tb3+ ions and the homogeneous dispersion of Tb atoms. Therefore, AlBNO films could be used for inorganic EL devices.
- 2011-04-25
著者
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Sakata Takao
Research Center For Ultra-high Voltage Electron Microscopy Osaka University
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Taniguchi Takashi
National Institute For Materials Science
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Kimura Chiharu
Department Of Electrical Engineering Osaka University
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Watanabe Kenji
National Inst. Materials Sci. (nims) Ibaraki Jpn
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Masumoto Keiko
Department Of Electrical Electronic And Information Engineering Osaka University
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Masumoto Keiko
Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Semba Akitoshi
Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Aoki Hidemitsu
Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Aoki Hidemitsu
Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Kimura Chiharu
Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Taniguchi Takashi
National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Watanabe Kenji
National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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