Effect of Al on the Formation of Cubic Boron Nitride Using Ni3Al Solvent under High Pressure
スポンサーリンク
概要
- 論文の詳細を見る
Cubic boron nitride (cBN) was synthesized using a Ni3Al alloy as a solvent under high pressure and high temperature. The range of cBN formation was determined to be between 4.5 and 6.5 GPa. In the temperature range between 1300 and 1900 °C at about 6 GPa, it seems that the formation mechanism of cBN changed. In the lower-temperature region (${<}1400$ °C), cBN was formed by a reaction between AlN and BN, possibly under solid-state conditions. In the higher-temperature region (${>}1400$ °C), molten Ni3Al infiltrated the starting hexagonal BN layer with rapid cBN precipitation.
- 2007-11-15
著者
-
Taniguchi Takashi
National Institute For Materials Science
-
Kubota Yoichi
National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
-
Kosuda Kosuke
National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
関連論文
- Identification of the Superconducting Phase in the Bi-Ca-Sr-Cu-O System : Electrical Properties of Condensed Matter
- Characteristics of Boron Epoxy Resin as a Gasket for Pressure Generation in the 20 GPa Region
- Neutrino Mass and End-Point Energy of ^3H β-Decay
- A 105 K Superconducting Phase in the Bi-Sr-Ca-Cu-O System : Electrical Properties of Condensed Matter
- Appearance of n-Type Semiconductingg Properties of cBN Single Crystals Grown at High Pressure : Semiconductors
- Luminescence Characteristics and Annealing Effect of Tb-Doped AlBNO Films for Inorganic Electroluminescence Devices
- Preparation of (Nd, Sr, Ce)_2CuO_x Type Compounds in a Gd-La-Sr-Cu-O System
- Effect of Al on the Formation of Cubic Boron Nitride Using Ni3Al Solvent under High Pressure
- First-Principles Study of Various Hexagonal BN Phases(Condensed matter : electronic structure and electrical, magnetic, and optical properties)
- Synthesis of Cubic and Hexagonal Boron Nitrides by Using Ni Solvent under High Pressure
- Network-Controlled High Voltage Power Supply Working in Magnetic Field (大気球研究報告)
- Relation between the Center Nucleus of Snow Crystals and Aerosol Particles in Arctic Canada
- Chemical Vapor Deposition of C Isotopically Enriched Polycrystalline Diamond (SELECTED TOPICS IN APPLIED PHYSICS : Diamond Semiconductors : from Materials to Devices)
- Synthesis of Cubic Boron Nitride Crystals Using Ni–Cr and Ni–Cr–Al Solvents under High Pressure
- Synthesis of Cubic Boron Nitride Using Ni–Mo Alloy as a Solvent
- Effective Use of Source Gas for Diamond Growth with Isotopic Enrichment
- Electrical Spin Injection into Graphene through Monolayer Hexagonal Boron Nitride
- Electron Energy Loss Spectrum in Adsorbed Residual Gas on Cooled Arachidic Acid Langmuir-Blodgett Film and Its Adsorbed Gas Amount
- Crystal growth of the high-TC superconductor in the Bi-Sr-Ca-Cu-O system.
- Fabrication and Characterization of High-Mobility Graphene p--n--p Junctions Encapsulated by Hexagonal Boron Nitride
- Effective Use of Source Gas for Diamond Growth with Isotopic Enrichment
- Fabrication and Characterization of High-Mobility Graphene p-n-p Junctions Encapsulated by Hexagonal Boron Nitride (SELECTED TOPICS IN APPLIED PHYSICS : Nano Electronics and Devices : Characterization and Control of Nano Surfaces and Interfaces)
- Effective Use of Source Gas for Diamond Growth with Isotopic Enrichment