Appearance of n-Type Semiconductingg Properties of cBN Single Crystals Grown at High Pressure : Semiconductors
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概要
- 論文の詳細を見る
Semiconducting properties of two types of cubic boron nitride (cBN) single crystals prepared at high pressure and high temperature were evaluated by Hall measurement. Sulfur was intentionally doped in one type as a donor and the other type contained no intentional dopants. Both crystals exhibit n-type conduction. Sulfur-doped and nonintentionally doped crystals show donor levels and carrier concentrations of 0.32 eV and 10^<14> cm^<-3>, and 0.47 eV and 10^<12> cm^<-3> at room temperature, respectively. The origin of n-type conduction of nonintentionally doped crystal has not been elucidated but oxygen appears to be a candidate for the donor in the crystal.
- 社団法人応用物理学会の論文
- 2002-02-01
著者
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KOIZUMI Satoshi
Advanced Materials Laboratory, National Institute for Materials Science
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TERAJI Tokuyuki
Department of Electrical Engineering, Osaka University
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WATANABE Kenji
Advanced Materials Laboratory, National Institute for Materials Science
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Yamaoka Shinobu
Advanced Materials Laboratory National Institute For Materials Science
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Teraji Tokuyuki
National Inst. For Materials Sci. Ibaraki Jpn
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Teraji Tokuyuki
Sensor Materials Center National Institute For Materials Science
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Teraji Tokuyuki
Department Of Electrical Engineering Graduate School Of Engineering Osaka University
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TANIGUCHI Takashi
Advanced Materials Laboratory, National Institute for Materials Science
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Taniguchi Takashi
National Institute For Materials Science
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Taniguchi Takashi
Advanced Materials Laboratory National Institute For Materials Science
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Koizumi Satoshi
Advanced Materials Laboratory National Institute For Materials Science
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Watanabe K
Advanced Materials Laboratory National Institute For Materials Science
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Watanabe Kenji
Advanced Materials Laboratory National Institute For Materials Science
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KOIZUMI Satoshi
Advanced Science Research Center, Japan Atomic Energy Research Institute
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