Effective Use of Source Gas for Diamond Growth with Isotopic Enrichment
スポンサーリンク
概要
- 論文の詳細を見る
A new technique reported herein was proposed for high carbon conversion efficiency from methane to diamond in microwave plasma-assisted chemical vapor deposition. The efficiency is increased by balancing the carbon feeding rate with the reactor and carbon consumption rate for diamond growth. The maximum conversion efficiency was as great as 80%. <sup>12</sup>C-enriched diamond films thus grown showed high isotopic enrichment of approx. 99.998%.
- 2013-05-25
著者
-
Isoya Junichi
University Of Library And Information Science
-
Teraji Tokuyuki
National Inst. For Materials Sci. Ibaraki Jpn
-
KOIZUMI Satoshi
National Institute for Research in Inorganic Materials
-
Taniguchi Takashi
National Institute For Materials Science
-
Koide Yasuo
National Institute For Materials Science (nims)
-
Taniguchi Takashi
National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
-
Isoya Junichi
University of Tsukuba, Tsukuba, Ibaraki 305-8550, Japan
-
Koizumi Satoshi
National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
-
Koide Yasuo
National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
関連論文
- Nanoprocessing of Diamond Using a Variable Pressure Scanning Electron Microscope
- Characteristics of Boron Epoxy Resin as a Gasket for Pressure Generation in the 20 GPa Region
- Neutrino Mass and End-Point Energy of ^3H β-Decay
- GROWTH OF DIAMOND BY ATOMIC VAPOR DEPOSITION
- Estimation of the Emission Barrier Height of p-Type Semiconducting Diamond from its Field Emission Property
- Appearance of n-Type Semiconductingg Properties of cBN Single Crystals Grown at High Pressure : Semiconductors
- Luminescence Characteristics and Annealing Effect of Tb-Doped AlBNO Films for Inorganic Electroluminescence Devices
- The Electronic States of Nickel ions in Diamond Calculated by a Discrete-Variational Xα Method
- Near-Surface Defects in Boron-Doped Diamond Schottky Diodes Studied From Capacitance Transients
- Preparation of (Nd, Sr, Ce)_2CuO_x Type Compounds in a Gd-La-Sr-Cu-O System
- Structure Analysis of SrTiO_3(111) Polar Surfaces
- Hillock-Free Homoepitaxial Diamond (100) Films Grown at High Methane Concentrations
- Effect of Al on the Formation of Cubic Boron Nitride Using Ni3Al Solvent under High Pressure
- First-Principles Study of Various Hexagonal BN Phases(Condensed matter : electronic structure and electrical, magnetic, and optical properties)
- Synthesis of Cubic and Hexagonal Boron Nitrides by Using Ni Solvent under High Pressure
- Network-Controlled High Voltage Power Supply Working in Magnetic Field (大気球研究報告)
- Familial Lateral Temporal Lobe Epilepsy Confirmed With Intracranial Electroencephalography and Successfully Treated by Surgery : Five Case Reports in One Family
- Relation between the Center Nucleus of Snow Crystals and Aerosol Particles in Arctic Canada
- Chemical Vapor Deposition of C Isotopically Enriched Polycrystalline Diamond (SELECTED TOPICS IN APPLIED PHYSICS : Diamond Semiconductors : from Materials to Devices)
- Electron Spectroscopic Determination of Electronic Structures of Phosphorus-Doped n-Type Heteroepitaxial Diamond (001) Surface and Junction (SELECTED TOPICS IN APPLIED PHYSICS : Diamond Semiconductors : from Materials to Devices)
- Color Filter Based on Surface Plasmon Resonance Utilizing Sub-Micron Periodic Hole Array in Aluminum Thin Film
- Nanophotonics Based on Semiconductor-Photonic Crystal/Quantum Dot and Metal-/Semiconductor-Plasmonics
- Synthesis of Cubic Boron Nitride Crystals Using Ni–Cr and Ni–Cr–Al Solvents under High Pressure
- Synthesis of Cubic Boron Nitride Using Ni–Mo Alloy as a Solvent
- Simulation of Band Diagram for Chemical-Vapor-Deposition Diamond Surface Conductivity
- Effective Use of Source Gas for Diamond Growth with Isotopic Enrichment
- Synchronized B and
- Electrical Spin Injection into Graphene through Monolayer Hexagonal Boron Nitride
- Synchronized B and ¹³C Diamond Delta Structures for an Ultimate In-Depth Chemical Characterization
- Electron Energy Loss Spectrum in Adsorbed Residual Gas on Cooled Arachidic Acid Langmuir-Blodgett Film and Its Adsorbed Gas Amount
- Fabrication and Characterization of High-Mobility Graphene p--n--p Junctions Encapsulated by Hexagonal Boron Nitride
- Effective Use of Source Gas for Diamond Growth with Isotopic Enrichment
- Fabrication and Characterization of High-Mobility Graphene p-n-p Junctions Encapsulated by Hexagonal Boron Nitride (SELECTED TOPICS IN APPLIED PHYSICS : Nano Electronics and Devices : Characterization and Control of Nano Surfaces and Interfaces)
- Effective Use of Source Gas for Diamond Growth with Isotopic Enrichment