Fabrication and Characterization of High-Mobility Graphene p--n--p Junctions Encapsulated by Hexagonal Boron Nitride
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概要
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We report on the fabrication and characterization of high quality graphene p--n--p junctions encapsulated by hexagonal boron nitride. By tuning the back gate and top gate bias voltages, a graphene p--n--p junction with tunable polarity and doping levels was realized. The p--n--p junction displayed distinct resistance oscillations, which was attributed to the Fabry--Perot interference of charge carriers in the p--n--p cavity. When a small magnetic field was applied, the oscillation phase was shifted by \pi, indicating the observation of Klein tunneling of charge carriers in the p--n--p junctions. The observation of Fabry--Perot interference and Klein tunneling with a macroscopic cavity length of L_{\text{c}} = 500 nm demonstrates the markedly high quality of our graphene p--n--p junction.
- 2013-11-25
著者
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Machida Tomoki
Institute Of Industrial Science University Of Tokyo
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Taniguchi Takashi
National Institute For Materials Science
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Masubuchi Satoru
Institute Of Industrial Science University Of Tokyo
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Watanabe Kenji
National Inst. Materials Sci. (nims) Ibaraki Jpn
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Taniguchi Takashi
National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
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Watanabe Kenji
National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
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Morikawa Sei
Institute of Industrial Science, University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Onuki Masahiro
Institute of Industrial Science, University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Iguchi Kazuyuki
Institute of Industrial Science, University of Tokyo, Meguro, Tokyo 153-8505, Japan
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