Observation of Half-Integer Quantum Hall Effect in Single-Layer Graphene Using Pulse Magnet(Condensed matter: electronic structure and electrical, magnetic, and optical properties)

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概要

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• We report on the magnetotransport measurement on a single-layer graphene in pulsed magnetic fields up to B=53T. With either electron-or hole-type charge carriers, the Hall resistance R_H is quantized into R_H=(h/e^2)υ^<-1> with υ=±2,±6, and ±10, which demonstrates the observation of a half-integer quantum Hall effect(QHE). At B=50T, the half-integer QHE is even observed at room temperature in spite of a conventional carrier mobility μ=4000cm^2V^<-1>s^<-1>.

• 社団法人日本物理学会の論文
• 2008-11-15

著者

• KINDO Koichi

  Institute for Solid State Physics, University of Tokyo

• Kindo Koichi

  Institute For Solid State Physics University Of Tokyo

• Kindo Koichi

  Institute For Solid State Physics The University Of Tokyo

• Takeyama Shojiro

  Institute For Solid State Physics University Of Tokyo

• Takeyama Shojiro

  Instilute For Solid State Physics University Of Tokyo

• MASUBUCHI Satoru

  Institute of Industrial Science, University of Tokyo

• SUGA Ken-ichi

  Institute for Solid State Physics, University of Tokyo

• ONO Masashi

  Institute of Industrial Science, University of Tokyo

• MACHIDA Tomoki

  Institute of Industrial Science, University of Tokyo

• Suga Ken-ichi

  Institute For Solid State Physics University Of Tokyo

• Ono Masashi

  Institute Of Industrial Science University Of Tokyo

• Machida Tomoki

  Institute Of Industrial Science University Of Tokyo:institute For Nano Quantum Information Electroni

• Machida Tomoki

  Institute Of Industrial Science University Of Tokyo

• Masubuchi Satoru

  Institute Of Industrial Science University Of Tokyo

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