Spin Relaxation in Weak Localization Regime in Multilayer Graphene Spin Valves
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概要
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The temperature dependence of the spin relaxation time \tau_{\text{s}} in multilayer graphene (MLG) spin valve devices was measured using a non-local magnetoresistance (NLMR) measurement. A weak localization (WL) was observed from magnetoresistance (MR) measurements below {\sim}70 K, suggesting coherent transport of the charge carriers. Within the same temperature range, we observed a large increase in the spin relaxation time \tau_{\text{s}} and spin diffusion length \lambda_{\text{s}} even though the diffusion constant D_{\text{s}} was suppressed by the WL. This demonstrated that the spin relaxation time in MLG could be significantly extended when the charge experiences quantum interference effect in the coherent charge transport regime.
- 2013-04-25
著者
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Machida Tomoki
Institute Of Industrial Science University Of Tokyo
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Moriya Rai
Institute Of Industrial Science University Of Tokyo
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Masubuchi Satoru
Institute Of Industrial Science University Of Tokyo
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Yamaguchi Takehiro
Institute of Industrial Science, University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Iguchi Kazuyuki
Institute of Industrial Science, University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Moriya Rai
Institute of Industrial Science, University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Masubuchi Satoru
Institute of Industrial Science, University of Tokyo, Meguro, Tokyo 153-8505, Japan
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