Electrical Spin Injection into Graphene through Monolayer Hexagonal Boron Nitride

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概要

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• We demonstrate electrical spin injection from a ferromagnet to a bilayer graphene (BLG) through a monolayer (ML) of single-crystal hexagonal boron nitride (h-BN). A Ni<inf>81</inf>Fe<inf>19</inf>/ML h-BN/BLG/h-BN structure is fabricated using a micromechanical cleavage and dry transfer technique. The transport properties across the ML h-BN layer exhibit tunnel barrier characteristics. Spin injection into BLG has been detected through non local magnetoresistance measurements.

• 2013-07-25

著者

• Machida Tomoki

  Institute Of Industrial Science University Of Tokyo

• Moriya Rai

  Institute Of Industrial Science University Of Tokyo

• Taniguchi Takashi

  National Institute For Materials Science

• Masubuchi Satoru

  Institute Of Industrial Science University Of Tokyo

• Watanabe Kenji

  National Inst. Materials Sci. (nims) Ibaraki Jpn

• Watanabe Kenji

  National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan

• Yamaguchi Takehiro

  Institute of Industrial Science, University of Tokyo, Meguro, Tokyo 153-8505, Japan

• Inoue Yoshihisa

  Institute of Industrial Science, University of Tokyo, Meguro, Tokyo 153-8505, Japan

• Morikawa Sei

  Institute of Industrial Science, University of Tokyo, Meguro, Tokyo 153-8505, Japan

• Onuki Masahiro

  Institute of Industrial Science, University of Tokyo, Meguro, Tokyo 153-8505, Japan

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