Fabrication and Characterization of High-Mobility Graphene p-n-p Junctions Encapsulated by Hexagonal Boron Nitride (SELECTED TOPICS IN APPLIED PHYSICS : Nano Electronics and Devices : Characterization and Control of Nano Surfaces and Interfaces)
スポンサーリンク
概要
著者
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Machida Tomoki
Institute Of Industrial Science University Of Tokyo
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Taniguchi Takashi
National Institute For Materials Science
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Masubuchi Satoru
Institute Of Industrial Science University Of Tokyo
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Watanabe Kenji
National Inst. Materials Sci. (nims) Ibaraki Jpn
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Morikawa Sei
Institute of Industrial Science, University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Onuki Masahiro
Institute of Industrial Science, University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Iguchi Kazuyuki
Institute of Industrial Science, University of Tokyo, Meguro, Tokyo 153-8505, Japan
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