Simulation of Band Diagram for Chemical-Vapor-Deposition Diamond Surface Conductivity

概要

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One-dimensional energy band simulation has been performed in order to understand chemical-vapor-deposition (CVD) diamond surface conductivity. It was found that the presence of shallow-level acceptors in the subsurface region and defect states at the surface causes a steep rise in the valence band toward the Fermi level, which causes accumulation of holes in the valence band in the subsurface and near-surface regions. An artificial negative charge accumulation (NCA) layer is introduced in the simulation to examine the effect of possible negatively charged adsorbates on surface conductivity. By adjusting the thickness of NCA layers, we have reproduced quantitatively both the surface conductivity change and Fermi-level change found in previous experiments [Kono et al.: Diamond Relat. Mater. 14 (2005) 459; Riedel et al.: ibid. 13 (2004) 746].
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2005-12-15