New Magnetic Nanodot Memory with FePt Nanodots
スポンサーリンク
概要
- 論文の詳細を見る
A new magnetic nanodot (MND) memory with FePt nanodots was proposed. The FePt nanodots dispersed in SiO2 insulating film was successfully fabricated by self-assembled nanodot deposition (SAND). The size of the FePt nanodot can be controlled by SAND with a different target area ratio of the FePt pellets area in the SiO2 target. Thermal annealing converts the magnetic properties of the FePt nanodots from antiferromagnetic into high coercivity ferromagnetic without thermal agglomeration. An $L1_{0}$ face-centered tetragonal (fct) FePt MND film was successfully formed which acted as a charge retention layer. Furthermore, the fundamental characteristics of the MND memory were investigated using magnetic metal oxide semiconductor (MOS) capacitor devices.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-04-30
著者
-
Oogane Mikihiko
Department Of Applied Physics Graduate School Of Engineering Tohoku University
-
BEA Ji-Chel
Japan Science and Technology Agency (JST)
-
MURUGESAN Mariappan
Japan Science and Technology Agency (JST)
-
Kono Shozo
Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
-
Samukawa Seiji
Institute Of Fluid Science Tohoku University
-
Fukushima Takafumi
Department Of Advanced Materials Chemistry Graduate School Of Engineering Yokohama National Universi
-
Tanaka Tetsu
Department Of Quantum Materials Science University Of Tokushima
-
Koyanagi Mitsumasa
Department Of Bioengineering And Robotics Graduate School Of Engineering Tohoku University
-
Kono Shozo
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
-
Yin Cheng-Kuan
Department of Bioengineering and Robotics, Tohoku University, 6-6-01 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
-
Samukawa Seiji
Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
-
Murugesan Mariappan
Japan Science and Technology Agency (JST), 6-6-01 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
-
Tanaka Tetsu
Department of Bioengineering and Robotics, Graduate School of Engineering, Tohoku University, 6-6-01 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
-
Oogane Mikihiko
Department of Applied Physics, Graduate School of Engineering, Tohoku University, 6-6-01 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
関連論文
- Ultrathin Oxynitride Films Formed by Using Pulse-Time-Modulated Nitrogen Beams
- Direct Observation of Atomic Ordering and Interface Structure in Co_2MnSi/MgO/Co_2MnSi Magnetic Tunnel Junctions by High-Angle Annular Dark-Field Scanning Transmission Electron Microscopy
- Large Tunnel Magnetoresistance of 1056% at Room Temperature in MgO Based Double Barrier Magnetic Tunnel Junction
- Gilbert Damping for Various Ni_Fe_ Thin Films Investigated Using All-Optical Pump-Probe Detection and Ferromagnetic Resonance
- Tunnel Magnetoresistance Effect in Magnetic Tunnel Junctions Using a Co_2MnSi(110) Electrode
- Tunneling Spin Polarization and Magnetic Properties of Co-Fe-B Alloys and Their Dependence on Boron Content
- Anisotropic Intrinsic Damping Constant of Epitaxial Co_2MnSi Heusler Alloy Films
- Temperature Dependence of Tunnel Magnetoresistance in Co-Mn-Al/Al-Oxide/Co-Fe Junctions
- Spin-Dependent Inelastic Electron Tunneling Spectroscopy of Magnetic Tunnel Junctions
- Large Magnetoresistance in Magnetic Tunnel Junctions Using Co-Mn-Al Full Heusler Alloy
- Novel Stacked Nanodisk with Quantum Effect Fabricated by Defect-free Chlorine Neutral Beam Etching
- A New Silicon Quantum-Well Structure with Controlled Diameter and Thickness Fabricated with Ferritin Iron Core Mask and Chlorine Neutral Beam Etching
- New Magnetic Nano-Dot Memory with FePt Nano-Dots
- Fabrication and Evaluation of Magnetic Tunnel Junction with MgO Tunneling Barrier
- Fabrication of Four-Terminal Fin Field-Effect Transistors with Asymmetric Gate-Oxide Thickness Using an Anisotropic Oxidation Process with a Neutral Beam
- Fabrication of a Vertical-Channel Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor Using a Neutral Beam Etching
- New Magnetic Flash Memory with FePt Magnetic Floating Gate
- Low-Leakage-Current Ultra-thin SiO_2 Film by Low-Temperature Neutral Beam Oxidation
- Control of Electron Transport in Two-Dimensional Array of Si Nanodisks for Spiking Neuron Device
- Characteristics of Metal Gate GOI-MOSFET with High-k Gate Dielectric Fabricated by Ge Condensation Method
- Structural characterization of epitaxial multiferroic BiFeO3 films grown on SrTiO3 (100) substrates by crystallizing amorphous Bi–Fe–Ox
- Fabrication of Defect-Free Sub-10nm Si Nanocolumn for Quantum Effect Devices Using Cl Neutral Beam Process
- Plasma-Radiation-Induced Interface States in Metal-Nitride-Oxide-Silicon Structure of Charge Coupled Device Image Sensor and Their Reduction Using Pulse-Time-Modulated Plasma
- New Reconfigurable Memory Architecture for Parallel Image Processing LSI with Three-Dimensional Structure
- Development of Si Long Microprobe (SiLM) for Platform of Intelligent Neural Implant Microsystem
- Low Power Spin-Transfer MRAM Writing Scheme with Selective Word Line Bootstrap
- Low Power and High Sensitivity MRAM Sensing Scheme with Body Biased Preamplifier
- Estimation of Wire Length Distribution for Evaluating Performance Improvement of Three-Dimensional LSI
- Optical Diagnostics of a Pulsed Inductively Coupled Nitrogen Plasma
- New Three-Dimensional Integration Technology Using Chip-to-Wafer Bonding to Achieve Ultimate Super Chip Integration
- Simulation of Band Diagram for Chemical-Vapor-Deposition Diamond Surface Conductivity
- Magnetoresistance Effect in Tunnel Junctions with Perpendicularly Magnetized $D$022-Mn3-\deltaGa Electrode and MgO Barrier
- Fabrication of Magnetic Tunnel Junctions with a Synthetic Ferrimagnetic Free Layer for Magnetic Field Sensor Applications
- Retraction: ``Large Tunnel Magnetoresistance of 1056% at Room Temperature in MgO Based Double Barrier Magnetic Tunnel Junction''
- Effects of Thermal Annealing for Restoration of UV Irradiation Damage during Plasma Etching Processes
- Effects of CF_3I Plasma for Reducing UV Irradiation Damage in Dielectric Film Etching Processes
- On-Wafer Monitoring of Vacuum-Ultraviolet Radiation Damage in High-Density Plasma Processes
- High-Efficiency Low Energy Neutral Beam Generation Using Negative Ions in Pulsed Plasma
- High-Efficiency Neutral-Beam Generation by Combination of Inductively Coupled Plasma and Parallel Plate DC Bias : Nuclear Science, Plasmas, Electric Dischanges
- Growth of Preferentially Oriented Microcrystalline Silicon Film Using Pulse-Modulated Ultrahigh-Frequency Plasma
- Laser-Induced Fast Magnetization Precession and Gilbert Damping for CoCrPt Alloy Thin Films with Perpendicular Magnetic Anisotropy
- Nickel Germanide Formation on Condensed Ge Layer for Ge-on-Insulator Device Application
- Reduction in Number of Sparks Generated in High-Density Plasma Process by Fixing the Wall Potential
- Electrical Characterization of Metal–Oxide–Semiconductor Memory Devices with High-Density Self-Assembled Tungsten Nanodots
- Characteristics of Copper Spiral Inductors Utilizing FePt Nanodot Films
- Surface Reaction Enhancement by UV irradiation during Si Etching Process with Chlorine Atom Beam
- Electron Emission from Indium Tin Oxide/Silicon Monoxide/Gold Structure
- Novel Particle-Reduction System in Plasma-Enhanced Chemical Vapor Deposition Process of Interlayer Dielectrics
- Ultrafast Active Transmission Lines with Low-k Polyimide Integrated with Ultrafast Photoconductive Switches
- High-Performance and Damage-Free Magnetic Film Etching using Pulse-Time-Modulated Cl2 Plasma
- Fabrication of a Vertical-Channel Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Using a Neutral Beam Etching
- Effects of Plasma Power and Plasma Sheath on Field Emission Properties of Carbon Nanotubes
- Influence of Pt doping on Gilbert damping in permalloy films and comparison with the perpendicularly magnetized alloy films
- Magnetically Damage-free Etching of MTJ Film for Future 0.24-μm-rule MRAMs
- Power Supply System Using Electromagnetic Induction for Three-Dimensionally Stacked Retinal Prosthesis Chip
- Evaluation of Platinum-Black Stimulus Electrode Array for Electrical Stimulation of Retinal Cells in Retinal Prosthesis System
- Evaluation of Electrical Stimulus Current Applied to Retina Cells for Retinal Prosthesis
- Optical Interposer Technology using Buried Vertical-Cavity Surface-Emitting Laser Chip and Tapered Through-Silicon Via for High-Speed Chip-to-Chip Optical Interconnection
- Magnetic Damping in Ferromagnetic Thin Films
- Irradiation-Damages in Atmospheric Plasma Used in a Resist Ashing Process for Thin Film Transistors
- Development of Si Double-Sided Microelectrode for Platform of Brain Signal Processing System
- Development of Si Neural Probe with Microfluidic Channel Fabricated Using Wafer Direct Bonding
- Characteristics of Silicon-on-Low $k$ Insulator Metal Oxide Semiconductor Field Effect Transistor with Metal Back Gate
- Direct Fabrication of Uniform and High Density Sub-10-nm Etching Mask Using Ferritin Molecules on Si and GaAs Surface for Actual Quantum-Dot Superlattice
- Super-Low-k SiOCH Film with Sufficient Film Modulus and High Thermal Stability Formed by Using Admixture Precursor in Neutral-Beam-Enhanced Chemical Vapor Deposition (Special Issue : Advanced Metallization for ULSI Applications)
- New Reconfigurable Memory Architecture for Parallel Image-Processing LSI with Three-Dimensional Structure
- Nickel Germanide Formation on Condensed Ge Layer for Ge-on-Insulator Device Application
- Fundamental Study of Complementary Metal Oxide Semiconductor Image Sensor for Three-Dimensional Image Processing System
- Two-Dimensional Si-Nanodisk Array Fabricated Using Bio-Nano-Process and Neutral Beam Etching for Realistic Quantum Effect Devices
- Room-Temperature Observation of Size Effects in Photoluminescence of Si.Ge./Si Nanocolumns Prepared by Neutral Beam Etching
- Tungsten Through-Silicon Via Technology for Three-Dimensional LSIs
- Large Magnetoresistance Effect in Epitaxial Co_2Fe_Mn_Si/Ag/Co_2Fe_Mn_Si Devices
- Effects of Ion Implantation Damage on Elevated Source/Drain Formation for Ultrathin Body Silicon on Insulator Metal Oxide Semiconductor Field-Effect Transistor
- Dependence of Tunnel Magnetoresistance Effect on Fe Thickness of Perpendicularly Magnetized L1_0-Mn_Ga_/Fe/MgO/CoFe Junctions
- Room-Temperature Observation of Size Effects in Photoluminescence of Si_Ge_/Si Nanocolumns Prepared by Neutral Beam Etching
- New Fabrication Technology of Fin Field Effect Transistors Using Neutral-Beam Etching
- Fabrication of Co2MnAl Heusler Alloy Epitaxial Film Using Cr Buffer Layer
- Fabrication and Evaluation of Magnetic Tunnel Junction with MgO Tunneling Barrier
- New Three-Dimensional Integration Technology Using Chip-to-Wafer Bonding to Achieve Ultimate Super-Chip Integration
- Quantitative Derivation and Evaluation of Wire Length Distribution in Three-Dimensional Integrated Circuits Using Simulated Quenching
- Large Magnetoresistance in Magnetic Tunnel Junctions Using Co-Mn-Al Full Heusler Alloy
- Gilbert Damping in Ni/Co Multilayer Films Exhibiting Large Perpendicular Anisotropy
- Spin-Dependent Inelastic Electron Tunneling Spectroscopy of Magnetic Tunnel Junctions
- Structural and Magnetic Properties of Co2MnSi Heusler Alloy Thin Films on Si
- Huge Spin-Polarization of L21-Ordered Co2MnSi Epitaxial Heusler Alloy Film
- New Magnetic Flash Memory with FePt Magnetic Floating Gate
- New Magnetic Nanodot Memory with FePt Nanodots
- Simulation of Band Diagram for Chemical-Vapor-Deposition Diamond Surface Conductivity
- Plasma-Radiation-Induced Interface States in Metal-Nitride-Oxide-Silicon Structure of Charge-Coupled Device Image Sensor and Their Reduction Using Pulse-Time-Modulated Plasma
- Boron Composition Dependence of Spin-Transfer Switching in Magnetic Tunnel Junctions with CoFeB Free Layers
- Low Temperature, Beam-Orientation-Dependent, Lattice-Plane-Independent, and Damage-Free Oxidation for Three-Dimensional Structure by Neutral Beam Oxidation
- The Enhancement of Magnetic Damping in Fe
- Enhancement of Spin Pumping Efficiency in Fe
- Observation of Precessional Magnetization Dynamics in L1
- The Enhancement of Magnetic Damping in Fe₄N Films with Increasing Thickness (Spintronics, superconductivity, and strongly correlated materials)
- Surface Reaction Enhancement by UV irradiation during Si Etching Process with Chlorine Atom Beam
- Enhancement of Spin Pumping Efficiency in Fe₄N/Pt Bilayer Films
- Observation of Precessional Magnetization Dynamics in L1₀-FePt Thin Films with Different L1₀ Order Parameter Values (Spintronics, superconductivity, and strongly correlated materials)
- Ultimate Top-down Etching Processes for Future Nanoscale Devices: Advanced Neutral-Beam Etching